以不同披覆輔助導電層面積之方式快速製備陽極氧化鋁之研究

The Research of Fast Fabrication of Anodic Aluminum Oxide by Covering the Conductive Layer with Different Surface Area

王譯聖(Yi-Sheng Wang)

指導教授 ： 王祥辰

國立中正大學/工學院/光機電整合工程研究所/碩士(2014年)

摘要

本論文研究在ITO透明導電基板上以電子束蒸鍍650nm厚鋁膜，製備自組裝陽極氧化鋁(Anodic Aluminum Oxide, AAO)奈米多孔洞結構，孔徑大小約40~80nm，利用以不同披覆輔助導電層面積之方式快速製備陽極氧化鋁。其中我們了解到在鋁膜與ITO基版之間含有一層鈦金屬層的差異性，鈦中間層可以有效地增進鋁膜與基版之間的黏合性，使得陽極氧化實驗過程中延緩AAO薄膜剝落的風險。此外，有關於AAO的光學特性如PL光譜與反射頻譜也在本論文中進行探討。
本實驗使用的是0.3M的草酸電解液，在40V定電壓模式的直流電源供應器分為兩階段式的陽極氧化處理，調整實驗溫度以及披覆上不同面積的導電層在試片表面，對於孔徑、孔間距等的影響性，這將可以縮短陽極氧化的製備時間，其披覆的面積越大製備出AAO的速率越快，孔徑大小隨著導電層面積越大而孔徑縮小。在陽極氧化的實驗溫度方面，溫度的下降孔洞的成長率也隨著下降。若能在ITO基板上快速成長出可控制的AAO模板，進而沈積可垂直站立的一維奈米柱、奈米線與奈米管等材料使ITO膜成為具備近似週期性之奈米結構背電極，將可擴大應用於光電子元件的發展範圍。

關鍵字

陽極氧化鋁

並列摘要

The thesis is focused on the procedure of porous Anodic Aluminum Oxide(AAO) process of vapor-deposition onto the Indium Tin Oxide (ITO) as transparent conductive substrate, with 650 nm in thickness and 40~80nm in pore size approximately. The experiment is design to use different covered area of auxiliary conductive layer to prepare AAO. The optical characters of AAO, such as PL spectrum, and reflection spectrum are further discussed in following thesis. In addition, adding the Titanium metal locating between Aluminum layer and ITO substrate can effectively enhance the adhesiveness between two outer-layers, and reduce the risk of AAO layers peel off during experimental procedure.
In order to cover different conductive area on the sample surface, the experiment is designed to use 40Volt to anodize conductive layer in 0.3M oxalic acid electrolytes under different temperature. The effect on size and spacing of pore by temperature is observed by SEM, the result is that to reduce the anodizing time require to prepare. AAO production rate can be increased as covered surface area increase, and pore size reduces, on the other hand. In anodic aluminum oxide experiment, temperature drop results to the decrease in pore growth rate. It is expecting that with controllable growth of AAO on ITO substrate, deposition of 1-D nanorods, nanowires and nanotube will make ITO layer as well served back electrode, further expand the potential of photoelectric devices.

並列關鍵字

Anodic Aluminum Oxide

參考文獻

[1] 陳貴賢，吳季珍，“一維奈米材料的研究”，物理雙月刊(23卷6期)(2001)

[3] Thelese R. B. Foong; Alan Sellinger; Xiao Hu “Origin of the bottlenecks in preparing anodized aluminum oxide (AAO) templates on ITO glass,” ACS nano, v2, n 11, p. 2250(2008).

[5] A. P. Li; F. Müller; A. Birner; K. Nielach; U. Gösele “Hexagonal pore arrays with a 50–420 nm interpore distance formed by self-organization in anodic alumina,” Appl. Phys., v84, p.6023(1998).

[6] Hideki Masuda, Kenji Fukuda, “Order metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina,” Science,268, p. 1466(1995)

[7] G.E.J. Poinern, N. Ali, D. Fawcett, “Progress in nano-engineered anodic aluminum oxide membrane development,” Materials., v4, p.487 (2011).