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Dependence of Growth Morphology on Atom Beam's Angle of Incidence: The Investigation of MBE Growth of Fe on Silicon Oxide

Dependence of Growth Morphology on Atom Beam's Angle of Incidence: The Investigation of MBE Growth of Fe on Silicon Oxide

指導教授 : 門福國
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摘要


以存在氧化層的Si(100)晶片當作基板,我們利用原子束磊晶的方式在不同原子束入射角(原子束行進方向與基板法線的夾角)與不同基板溫度的條件下沉積鐵原子,並藉由原子力顯微鏡觀察表面結構及探討鐵原子團的成長機制。 在實驗中,我們首先選定基板的溫度(分別為室溫、200C及450℃),在基板溫度固定的狀況下改變鐵原子束入射角角度。經由角度的改變,我們希望量化生成鐵原子團顆粒體積及原子團高度與入射角間的關係。實驗結果顯示基板溫度明顯影響生成鐵原子團的尺度,在基板溫度固定的條件下,入射角、沉積時間、加熱時間亦均影響鐵原子團的生成形貌。

並列摘要


We have employed molecular beam epitaxy to deposit iron atoms on Si(100) substrates with native oxide layer being attached as depositing surface. For a given substrate temperature, the angle of the incident iron atom beam (defined as the angle between the direction of the incident atom beam and the substrate’s surface normal direction) has been used as a variable in the experiment. Our goal is to quantitatively study the dependences of iron cluster’s morphology on different growth parameters. In our experiment, for a chosen substrate temperature (three temperatures have been selected: room temperature, 200C, and 450C) we vary parameters such as angle of incidence, duration of atom deposition, and the flux of incident atom beam to examine the resultant surface morphology. Our results show that the substrate temperature is an important factor determining the iron cluster’s size and shape. For a given substrate temperature, both the angle of incidence and the duration of atom deposition are found to affect the growth of iron clusters.

並列關鍵字

Cluster's size Iron AFM

參考文獻


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被引用紀錄


蔡宗翰(2016)。鍺在矽(111)-(7×7)結構上島嶼成長過程〔碩士論文,國立中正大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0033-2110201614062479