We have employed molecular beam epitaxy to deposit iron atoms on Si(100) substrates with native oxide layer being attached as depositing surface. For a given substrate temperature, the angle of the incident iron atom beam (defined as the angle between the direction of the incident atom beam and the substrate’s surface normal direction) has been used as a variable in the experiment. Our goal is to quantitatively study the dependences of iron cluster’s morphology on different growth parameters. In our experiment, for a chosen substrate temperature (three temperatures have been selected: room temperature, 200C, and 450C) we vary parameters such as angle of incidence, duration of atom deposition, and the flux of incident atom beam to examine the resultant surface morphology. Our results show that the substrate temperature is an important factor determining the iron cluster’s size and shape. For a given substrate temperature, both the angle of incidence and the duration of atom deposition are found to affect the growth of iron clusters.