Properties of Cu Thin Films Grown by Sputter Deposition and Molecular Beam Epitaxy

Properties of Cu Thin Films Grown by Sputter Deposition and Molecular Beam Epitaxy

林子敬(Lin Tsu-Ching)

指導教授 ： 門福國

國立中正大學/理學院/物理學系/碩士(2014年)

摘要

在實驗中分別以直流二極式濺鍍機與分子束磊晶的方式在玻璃基板上鍍上銅薄膜。對濺鍍機鍍的銅膜樣品，我們以原子力顯微鏡掃描其表面並記錄其起表面起伏度，歸納出膜厚與表面起伏度的相關性。對分子束磊晶的銅模樣品，我們以四點范德堡方法測量其電阻，經過計算可得知銅膜電阻率與膜厚的關係，並與理論模型比較，發現與理論相符。

關鍵字

電阻率 ； 銅膜

並列摘要

Copper thin films have been grown on glass substrates by DC diode planar sputter and molecular beam epitaxy (MBE). The as-grown Cu films have been examined by atomic force microscopy. A positive correlation between the roughness and the thickness of thin Cu films is observed. On the other hand, real-time resistivity measurements of Cu films grown by MBE via Van der Pauw method reveal a dependence of resistivity on the film thickness. This dependence is then compared to known results predicted by theoretical models and from experimental data.

並列關鍵字

copper thin films ； resistivity

參考文獻

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