製備硫化銻於二氧化鈦-石墨烯複合材料 UV/VIS 光偵測器元件製程與光電特性研究

The UV/VIS Photodetector Fabrication and Photo Characteristics Study of Deposited Sb2S3 on TiO2-Graphene Composite

黃光緯(Guang-Wei Huang)

指導教授 ： 丁初稷

國立中正大學/工學院/光機電整合工程研究所/碩士(2015年)

摘要

本研究以化學氣相沉積法成長的石墨烯轉印於玻璃基板上，並於其上滴落塗佈二氧化鈦，隨後以化學浴沉積法沉積硫化銻半導體薄膜，藉由以上兩種材料增強石墨烯於紫外以及可見光的響應，並探討不同塗佈層數的二氧化鈦對石墨烯光響應造成的影響，最後找出最佳化層數的元件，再做進一步的響應研究。
本研究透過全光譜的量測找出元件其最適響應波段以及光響應值，而後歸納出最佳化元件，接著以氙燈、LED、雷射找出其最大的光響應和最快的響應時間；由實驗結果得知於 405 nm 波段、1 μW氙燈照射下有最大的光響應值 (responsivity)，而於 405 nm 波段、45 mW 雷射照射下有最快的響應時間，上升 (rising time) 及下降時間 (falling time) ，分別為：560 A/W、0.74 s、37 s。證明了二氧化鈦及硫化銻半導體的沉積有助於石墨烯光偵測器的光響應。

關鍵字

硫化銻 ； 二氧化鈦 ； 化學浴沉積法 ； 石墨烯 ； 光偵測器

並列摘要

In this study, graphene was grown on copper foil by chemical vapour deposition (CVD) and transferred onto glass substrate. Then, TiO2 and Sb2S3 semiconductor thin film were deposited onto graphene by drop casting and chemical bath deposition (CBD) respectively. The responsivity of graphene on UV light and visible light was increased with this enhancement. The effect of different casted TiO2 layers on the responsivity of the device was studied. The optimized device was defined. The most suitable responsive wavelength and responsivity of the device were measured by full-spectrum technique. The best responsivity and time response of the optimized device were determined by Xenon (Xe) lamp, Light Emitting Diode (LED) and Laser. Irradiated light with 405 nm and 1 μW by Xe lamp showed best responsivity which is 560 A/W, whereas 405 nm and 45 mW of Laser beam showed shortest rising and falling time which are 0.74 s and 37 s respectively. The deposition of TiO2 and Sb2S3 semiconductor on graphene photodetector was proven increasing the responsivity of the device and successfully fabricated.

並列關鍵字

TiO2 ； chemical bath deposition method ； graphene ； Sb2S3 ； photodetector

參考文獻

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