本論文主要是利用TSMC 0.18 μm與UMC 0.18 μm CMOS-MEMS製程設計應用於毫米波段之前端電路,分別為利用寬邊耦合器設計之連續可調反射式相移器、DC-70 GHz具低驅動電壓之單刀單擲CMOS微機電開關及利用主動式類循環器設計之反射式相移器。 利用寬邊耦合器設計之連續可調反射式相移器,使用TSMC 0.18 μm CMOS-MEMS製程所製作,此電路架構承襲過去實驗室學長研究經驗,主要針對致動器架構重新設計,改善其切換狀態,以期能達連續可調之目的。 DC-70 GHz具低驅動電壓之單刀單擲CMOS微機電開關,使用UMC&TSMC 0.18 μm CMOS-MEMS製程所實現,其致動器使用低驅動電壓之設計,驅動電壓為12V。利用主動式類循環器設計之反射式相移器,使用UMC 0.18 μm CMOS-MEMS製程製作,嘗試將機械式可變電容與主動電路整合,以機械結構可變電容為反射式負載,機械結構驅動電壓為35 V,於頻率操作24-GHz時,相位可調102°。
This thesis presents the design of three millimeter-wave front-end circuits using TSMC 0.18 μm and UMC 0.18 μm CMOS-MEMS technologies, including a broadside coupler-based reflection-type phase shifter with continuous-phase-tuning mechanism, a DC-70 GHz CMOS-MEMS SPST switch with low operating voltage, and an active-circulator-based reflection-type phase shifter. The broadside coupler-based reflection-type phase shifter with continuous-phase-tuning mechanism is implemented in TSMC 0.18 μm CMOS-MEMS process. In this design, the number of switching states is increased, leading to larger achievable phase tuning range. With 47-volt actuation voltage, the simulation result shows that the ~134°phase tuning range can be achieved while the insertion loss is 4.3 0.5dB at 70-GHz. The second circuit is a DC-70 GHz CMOS-MEMS SPST switch, which is implemented in both UMC and TSMC 0.18 μm CMOS-MEMS process. The electrical-driven actuator was carefully designed to reduce the operating voltage down to 12 V. The measurement result shows that the insertion loss is less than 0.4 dB in ON-state, but the isolation is not good in OFF-state due to the unexpected silicon oxide accumulation. The last one is an active-circulator-based reflection-type phase shifter. The active quasi-circulator is constructed by CMOS transistors, while the MEMS-driven capacitance is adopted as reflective load. It is implemented in TSMC 0.18 μm CMOS-MEMS process. The Simulation result shows that the phase tuning range is 102° under a 35-volt supply voltage at 24-GHz.