以連續離子層吸附反應法製作堆疊型硫化鎘-石墨烯複合材料之光電特性研究

Optoelectronic Properties of Multilayer Stacking Cadmium Sulfide-Graphene Composite Material by Successive Ionic Layer Adsorption and Reaction

陳錦煜(CHIN-YU CHEN)

指導教授 ： 丁初稷

國立中正大學/工學院/光機電整合工程研究所/碩士(2016年)

摘要

由於石墨烯具有相當高的載子遷移率和寬廣的吸收波長，適合用來作為光偵測器，但卻因其穿透率太高且照光後產生的載子復合速度太快而導致對光的反應微弱。因此本研究使用連續離子層吸附反應法成長硫化鎘薄膜於石墨烯上，改善石墨烯作為光偵測器的缺點，藉由硫化鎘對可見光的吸收增強石墨烯的光響應。
我們分別製作了未堆疊與堆疊硫化鎘/石墨烯複合元件量測其電性，實驗結果發現重複堆疊石墨烯成長硫化鎘薄膜的複合元件具有較佳的光響應，因此我們使用雷射光源探討堆疊元件在不同電壓與光強度下的特性，並用氙燈光源量測堆疊 3L硫化鎘/石墨烯元件的全光譜響應，發現在波長 300 - 500 nm 下都有 100 A/W 以上的響應度。證明沉積硫化鎘於石墨烯上確實可以幫助石墨烯提高光響應。

關鍵詞 : 光偵測器、石墨烯、連續離子層吸附反應法、硫化鎘

關鍵字

硫化鎘 ； 連續離子層吸附反應法 ； 石墨烯 ； 光偵測器

並列摘要

Graphene is a suitable material in the application of photodetectors for its high carrier mobility and broad wavelength absorption ability. However, its optical transmittance and the carrier recombination speed is extremely high after illumination, resulting in poor photoresponse. In this study, the visible-light photoresponse of graphene is enhanced by growing cadmium sulfide (CdS) through Successive Ionic Layer Adsorption and Reaction (SILAR) method on graphene.
Multilayer stacking CdS/graphene and non-stacking CdS/graphene devices were fabricated and their electrical properties were studied. Based on the experimental results, multilayer stacking CdS/graphene composite photodetector device shows better photoresponse. The optoelectronic characteristic of the multilayer stacking CdS/graphene was determined by irradiating laser sources with various incident light powers and different applied voltages. The full spectral response of 3-layer stacking CdS/graphene was measured by monochromntor, we found that the maximum responsivities were more than 100 A/W when the excitation wavelength changed from 300 nm to 500 nm. Therefore, by depositing CdS on graphene is proven to increase the photoresponse of graphene.

Keywords: photodetector, graphene, SILAR, cadmium sulfide

並列關鍵字

cadmium sulfide ； SILAR ； graphene ； photodetector

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