硫化鎘奈米線的壓電檢測特性及應用探討

本研究利用三區真空爐管成長有鎵摻雜的硫化鎘奈米線，藉由XPS分析可確定鎵有摻雜於硫化鎘奈米線內並且可知道鎵摻雜於硫化鎘奈米線中的比例平均為7.17 %。而PL量測可以明確的發現硫化鎘奈米線能隙的發光會因為鎵摻雜的緣故產生紅位移的現象從510 nm位移至516 nm。接著探討鎵摻雜的硫化鎘奈米元件電子傳輸的特性，元件量測的結果可得鎵摻雜的硫化鎘奈米線能可維持n型半導體的特性且有105的開關比，在透過分析與統計可得平均載子濃度為2.51x1017 cm-3，而平均載子遷移率則為202 cm2/V s。之後將成長的鎵摻雜硫化鎘奈米線製成可撓曲元件並對其進行形變的特性變化分析，觀察到因為形變而引起的壓電場會改變金屬與半導體接觸時的蕭特基能障，進而影響元件的表現。另外，我們也以微影技術及陽離子轉化技術將鎵摻雜的硫化鎘奈米線製作成硫化鎘/硫化亞銅殼核異質結構，進行光伏特性的探討，並且針對不同鎵摻雜的硫化鎘/硫化亞銅殼核異質結構做特性分析，可以得知隨著摻雜量的提高(0.1 g提升至0.3 g)，整體的轉換效率也會上升(0.4045 %提升至0.6883 %)。

關鍵字

硫化鎘；摻雜；壓電；太陽能電池

並列摘要

Ga-doped cadmium sulfide (CdS) nanowires (NWs) were grown by using chemical vapor deposition (CVD) method and it was confirmed that gallium has been incorporated into CdS NWs with the average atomic percentages of 7.17% by X-ray photoelectron spectroscopy (XPS) analysis.We then investigated the carrier transport properties of the Ga-doped CdS NWs, the results showed the CdS NWs remained the n-type semiconductor characteristic due to the additional electron provided by gallium dopant, gallium dopant serves as donor in CdS NWs with the average carrier concentration 2.51x1017 cm-3 and mobility 202 cm-2/V s. Next, we used Ga-doped CdS NWs to fabricate the flexible devices, owing to the piezoelectric property of Wurtize-structured CdS NWs, the electrical characteristics of CdS NW flexible devices vary while bending, the results are attributed to the change the Schoktty barrier hight (SBH). Moreover, we fabricated the CdS/Cu2S core-shell n-p hetrostructures by photolithography and cation exchange technique. The photovoltaic property of hetrostructures with different Ga doping levels were measured. In short, the power conversion efficiency (n) raised from 0.4045% to 0.6883 % as the doping level increased from 0.1 g to 0.3 g

並列關鍵字

CdS ； Dopping ； Piezoelectric ； Solar cell

參考文獻

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5. Liu C, Dai L, Ye Y, Sun T, Peng RG, Wen X, et al. High-efficiency color tunable n-CdSxSe1-x/p+-Si parallel-nanobelts heterojunction light-emitting diodes. J Mater Chem 2010, 20(24): 5011-5015.

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硫化鎘奈米線的壓電檢測特性及應用探討

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