銅銀基金屬薄膜退火後光電特性之研究

Effects of annealing processes on optoelectronic properties of Cu-Ag based metallic films

陳泓安(Chen Hong-An)

指導教授 ： 林鉉凱

國立屏東科技大學/工學院/材料工程研究所/碩士(2019年)

https://doi.org/10.6346/NPUST201900161

摘要

本實驗使用高真空濺鍍系統，沉積不同比例銅銀基(Zr、Mg)薄膜，加入30 nm ITO薄膜形成雙層結構薄膜，並比較雙層結構薄膜高溫爐退火、雷射退火與RTA快速退火後之光電特性。結果顯示雙層結構能使薄膜光電特性提升，ITO/Cu25Ag50Mg25雙層結構具有最佳光電特性，經Figure of merit計算，品質因素可達2.1×10-3 Ω-1(19 Ω/□，72%)。雷射退火有最佳結果，ITO/Cu10Ag65Mg25在雷射退火後有最佳光電特性，Figure of merit可升至1.9×10-2 Ω-1(7 Ω/□，82%)。由三種退火處理後可發現，雷射退火能有效抑制金屬氧化物的生成，使薄膜光電特性提升。於PET基板上沉積雙層結構薄膜，其銅銀基ΔR/R0約為0.07~0.37，經7 mm撓曲半徑的10000次撓曲試驗後，與單層30 nm ITO的0.93相比有明顯的降低，結果可得知銅銀基薄膜的雙層結構，能有效提高抗撓曲性能。AM與CAM的比較可得知，退火後IAM與ICAM的光電特性相差不大，ICAM有較佳的抗撓曲性。

關鍵字

濺鍍 ； 金屬薄膜 ； 退火 ； 撓曲

並列摘要

Cu-Ag based (CuAgZr、CuAgMg) and ITO/Cu-Ag based films with different contents are deposited on glass substrates and then treated by traditional furnace, laser or RTA annealing process. The structural, optical and electrical properties of the as-deposited and annealed samples are investigated and compared. According to results, it shows the best optical and electrical properties of ITO/ Cu25Ag50Mg25, the value of figure of merit (FOM) is up to 2.1×10-3 Ω-1 (19 Ω/□, 72%). After the laser annealing process, the best optical and electrical properties of ITO/Cu10Ag65Mg25, and the value figure of merit is up to 1.9×10-2 Ω-1 (7 Ω/□, 82%). In addition, the electrical property of ICAZ and ICAM films can be effectively improved using the laser annealing process due to its lower formation of metal oxide. Finally, the relative change in resistivity of the as-deposited ITO/Cu-Ag based sample following fatigue testing with a bend radius of 7 mm (ΔR/R0 = 0.07~0.37) is significantly lower than that of a pure ITO film of roughly equivalent thickness (ΔR/R0 = 0.93).

並列關鍵字

sputter ； metal film ； annealing ； bending

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