增強型/空乏型p型氮化鎵/氮化鋁/氮化鋁鎵/氮化鎵之金氧半-高電子遷移率電晶體在氮化鎵基板上的研究

Investigation of the E/D-mode p-GaN/AlN/AlGaN/GaN MOS-HEMT on GaN Substrate

李俊毅(Jyun-Yi Lee)

指導教授 ： 李冠慰

義守大學/智慧科技學院/電子工程學系/碩士(2022年)

摘要

本論文主要是研究在新型GaN基板上，以p型氮化鎵/氮化鋁/氮化鋁鎵/氮化鎵之結構，製作成增強型及空乏型高電子遷移率電晶體。文中使用蝕刻停止層技術，不僅讓p-GaN蝕刻製程得到有效的控制，也使表面蝕刻均勻性更好；為了減少表面因蝕刻而產生的缺陷，使用原子層沉積技術成長氧化鋁薄膜，成功製作出了增強型/空乏型p型氮化鎵/氮化鋁/氮化鋁鎵/氮化鎵之金氧半-高電子遷移率電晶體，氧化物薄膜不僅減少了漏電流，也提高了增強型元件的操作電壓。除了一般的直流電性量測外，也進行了可靠度量測分析，並對增強型元件進行閘極崩潰時間量測，透過韋伯分布推估了元件生命期。

關鍵字

無

並列摘要

This thesis mainly studies fabrication of the enhancement-mode(E-mode) and depletion-mode(D-mode) high electron mobility transistors (HEMTs) by p-GaN/AlN/AlGaN/GaN structure on the novel GaN substrate. In this thesis, the etching stop layer technology is used to not only effectively control the p-GaN etching, but also improve the surface etching uniformity. Growth of Al2O3 films by Atomic Layer Deposition (ALD) to reduce surface traps caused by etching. Therefore, the E/D-mode p-GaN/AlN/AlGaN/GaN MOS-HEMTs was fabricated successfully. The oxide film not only reduces current leakage, but also increases the operating voltage of E-mode devices. In addition to the general DC measurements, reliability measurement analysis was also carried out. Time-dependent gate breakdown of the E-mode devices were measured, and the lifetime was estimated from the Weibull distribution.

並列關鍵字

none

參考文獻

[1] B. Gelmont, K. Kim, and M. Shur, "Monte Carlo simulation of electron transport in gallium nitride", Journal of Applied Physics, vol. 74, no.3, pp.1818-1821, Jun. 1998.

[2] M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, B. T. Dermott and J. A. Higgins, "Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors," IEEE Electron Device Letters, vol. 17, no. 7, pp. 325-327, Jul. 1996.

[3] T. P. Chow, I. Omura, M. Higashiwaki, H. Kawarada and V. Pala, "Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors," IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 856-873, Mar. 2017.

[4] Isabella Rossetto, Matteo Meneghini, Oliver Hilt, Eldad Bahat-Treidel, Carlo De Santi, Stefano Dalcanale, Joachim Wuerfl, Enrico Zanoni, and Gaudenzio Meneghesso, "Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate," IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2334-2339, Jun. 2016.

[5] Kevin J. Chen, Oliver Häberlen, Alex Lidow, Chun lin Tsai, Tetsuzo Ueda, Yasuhiro Uemoto, and Yifeng Wu, "GaN-on-Si Power Technology: Devices and Applications," IEEE Transactions on Electron Devices, vol. 64, no. 3, pp. 779-795, Mar. 2017.