雷射隱形切割藍寶石基板研究

An Investigation on Laser Stealth dicing cut on Sapphire Substrates

黃建翔(Jian-Siang Huang)

指導教授 ： 徐祥禎

義守大學/理工學院/機械與自動化工程學系/碩士(2015年)

https://doi.org/10.6343/ISU.2015.00077

摘要

本研究目的在於使用皮秒雷射切割藍寶石基板(Sapphire Substrate)，包含隱形切割LED使用之藍寶石晶圓(Sapphire Wafer)和智慧手持裝置的藍寶石玻璃(Sapphire Glass)，探討雷射的基礎研究與應用開發。雷射切割實驗的參數設計是以切割功率(power)、脈衝重複率(pulse repetition rate)、切割速度(speed)、焦距位置(defocus)、指數(index)組合搭配，並使用掃描式電子顯微鏡(SEM)觀察皮秒雷射對於藍寶石材料加工後的切割道線寬(kerf width)、切割深度(depth)、深寬比(aspect ratio)與熱影響(heat effect)。實驗結果顯示功率與脈衝重複率對藍寶石基板的深寬比有較重要的影響，焦距位置、指數則較無關聯。切割速度在特殊情況下，尤以翹曲的藍寶石晶圓，需要特別設計的夾治具來固定與平整，發現切割速度影響隱形切割的結果。本研究進行系列的實作實驗，得到最佳化的製程參數，提供產業界應用。

關鍵字

皮秒雷射 ； 藍寶石基板 ； 參數設計 ； 深寬比 ； 夾治具

並列摘要

In this research, an advanced picosecond Laser has been applied to machine sapphire substrate, such as sapphire wafer and sapphire glass, to investigate the fundamental theorem as well as industrial application on Laser technique. Parameters used on design of experiment (DOE) are power, pulse repetition rate, speed, defocus and index. The quality of machined surface, such as kerf width, depth, aspect ratio as well as heat effects has been carefully investigated by scanning electron microscope (SEM). Among those DOE parameters power and pulse repetition rate play important roles in lasering sapphire substrate and the cutting speed is the key factor in stealth dicing (SD) in warped sapphire wafer with special self-designed fixture. Parameters of defocus and index show irrelevant to depth of cut and kerf width. The insight of pico second Laser technology has been explored in this paper. A series of comprehensive experiments has been conducted and the results can be easily applied to the optimal design rules.

並列關鍵字

picosecond Laser ； sapphire substrate ； design of experiment ； stealth dicing

參考文獻

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