熱處理對二氧化鈦摻雜鉬薄膜性質影響之研究

Study on the Effect of Heat Treatment on the Properties of TiO2:Mo films

劉儀均(Yi-Chun Liu)

指導教授 ： 洪博彥

義守大學/理工學院/材料科學與工程學系/碩士(2019年)

摘要

本實驗以射頻磁控濺鍍機 (RF Magnetron Sputter) 沉積TiO2:MoO3之薄膜，於玻璃基板及矽基板，後續進行退火及各項分析。濺射功率固定為100W，濺射時間為30 min、45 min、60 min，退火溫度分別為室溫、450℃、550℃、650℃、750℃，持溫時間為60 min、120 min、150 min。目的為了解熱處理對薄膜造成之影響，進一步改善濺鍍條件，期望得出最佳之條件，沉積於玻璃基板，製備透明導電薄膜及沉積於矽基板，製備半導體元件。
從實驗中可以得知，溫度升高可以使晶粒成長，結晶效果增加，而能隙地窄化也進而促使電性增加。但是持溫時間的增加以 120 min有最佳之效果，過多的能量並不能帶來正向之結果。而濺鍍時間的增加，雖使穿透率下降，但卻使電性效果增加。而參數以濺鍍 60 min，退火750℃，持溫 120 min，有最佳之結果。

關鍵字

RF磁控濺鍍法 ； 二氧化鈦 ； 透明導電薄膜

並列摘要

In this study, we prepared TiO2:MoO3 thin films on the glass substrates and the silicon substrates by RF magnetron sputtering, method, followed by annealing and various analysis. The TiO2 thin films prepared under the condition of 5×10-2 torr sputterting pressure, 100W sputtering power, 30 minutes, 45 minutes, 60 minutes sputtering time, heat treatment at 450°C, 550°C, 650°C, 750°C, and the holding time is 60 min, 120 min, 150 min.
The purpose is to understand the influence of heat treatment on the film, further improve the sputtering conditions, and expect to obtain the best conditions, deposit on the glass substrate, prepare a transparent conductive film and deposit on the germanium substrate to prepare a semiconductor component.
It can be known from the experiment that the temperature rise can cause the crystal grains to grow, the crystallization effect increases, and the narrowing of the energy gap also promotes the electrical increase. However, the increase in temperature holding time has the best effect with 120 min. Excessive energy does not bring positive results. The increase in sputtering time, although the penetration rate is reduced, but the electrical effect is increased. The parameters were sputtered for 60 min, annealed at 750 ° C, and held at a temperature of 120 min, with the best results.

並列關鍵字

RF Magnetron Sputter ； TiO2 ； Transparent Conductive Oxide

參考文獻

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