- 學位論文
氮摻雜氧化亞銅薄膜之製備及性質研究
Preparation and Properties of and N-doped Cu2O Thin Films
摘要
本實驗利用射頻磁控濺鍍系統以銅靶進行實驗，並且通入氬氣、氧氣及氮氣混合氣氛，改變氮氣氛摻雜濃度也改變基板，並以X-ray繞射進行薄膜結構分析、SEM觀察其表面型態、UV-visible量測穿透率、霍爾量測儀量測鍍膜電阻性，來探討氧化亞銅薄膜之微結構及性質變化。 實驗結果顯示，在溫度500℃，濺鍍功率100W，成長壓力5mTorr實驗條件下，所有薄膜均以優選方向成長，且優選方向會隨著混合氣氛氮氣濃度增加，由(200)優選方向會轉變為(111)優選方向，再由(111) 優選方向轉變為(200) 優選方向。氧化亞銅薄膜的表面微結構，隨著氮氣氛增加，晶粒變小；可見光區平均穿透率則隨著氮氣氛增加，穿透度越來越低，由66.73％降到54.03％再升至68.95%；由霍爾量測結果顯示氧化亞銅薄膜電阻率隨氮摻雜量由4Ω-cm增加到18Ω-cm。
並列摘要
The experiment by RF magnetron sputtering system to experiment copper target, and purged with argon, oxygen and nitrogen mixed atmosphere, a nitrogen atmosphere to change the doping concentration of the substrate is also changed, and a thin film X-ray diffraction structural analysis, SEM observed surface patterns, UV-visible transmittance measurements, Hall measuring instrument measuring resistive coating, to explore the microstructure and properties of copper oxide thin film changes. Experimental results show that at a temperature of 500 ℃, sputtering power of 100W, at a pressure 5mTorr experimental growth conditions, all the grown films are preferred direction, and the preferred direction will increase as a mixed atmosphere of nitrogen concentration, the (200) direction will be preferably converted to (111) preferred orientation, and then converted by the (111) preferred orientation of (200) preferred orientation. Surface Microstructures cuprous oxide film with increasing nitrogen atmosphere, the grain becomes small; the average transmittance in the visible region, along with the nitrogen increases, more and more low penetration from 66.73% down to 54.03% up again to 68.95%; by the Hall measurement results show cuprous oxide film resistivity with doping amount of nitrogen from the 4Ω-cm to 18Ω-cm.