磁控濺鍍氧化亞銅奈米薄膜之光電特性研究

Electro-Optic Properties of Magnetron Sputtered Nano Cuprous Oxide Films

陳俊元(Chun-Yuan Chen)

指導教授 ： 盧陽明

崑山科技大學/工程學院/電子工程研究所/碩士(2003年)

https://doi.org/10.6828/KSU.2003.00005

摘要

太陽能電池(solar cell)是利用光伏打效應(photovoltaic effect)，利用P-N接面(p-n junction)半導體(semiconductor)，將光能吸收後直接轉換成電能的一種裝置，為達太陽能電池大面積與普及化的目標，發展薄膜太陽能電池(thin film solar cell)是未來的趨勢之一。因其具有低成本、大量生產、簡單製程等特性置。目前應用於薄膜太陽能電池之半導體的材料有很多，其中氧化亞銅(cuprous oxides)受到相當矚目，主要乃因其為直接能隙(direct bandgap)的半導體材料，其能階值約為2.0 eV，具有相當高的光吸收係數，起始原料價格便宜、量豐富、光電轉換效率高，以及在長時間使用下，依然能維持良好的元件穩定特性等優點。

本研究將採用射頻磁控濺鍍法，製備Cu2O薄膜。主要分成三大部分，其一為單相Cu2O薄膜，生成範圍之研究，其二為以共濺鍍法，摻雜對Cu2O薄膜光電特性之影響，其三為氫氣電漿後處理對Cu2O薄膜電性之研究。

研究結果顯示：在固定濺射必v250瓦特之下，Cu2O薄膜生成範圍深受氧氣流量之影響，另外基材溫度及濺鍍壓力，也會影響Cu2O薄膜之生成。氮氣的添加可以有效降低Cu2O薄膜之電阻率可將電阻率由純Cu2O薄膜的136 ohm-cm 降低到 14.8 ohm-cm。而氫氣電漿後處理，則可藉由懸鍵之消除，進一步降低Cu2O薄膜電阻率為9 ohm-cm。

關鍵字

濺鍍 ； 氧化亞銅 ； 氧化銅 ； 霍爾量測系統

並列摘要

The solar cell system with photovoltaic (or PV) system can convert light energy into electricity. There are many advantages of solar cell, including high reliability, low operation cost, environmental benefits, modularity, low construction costs.
There are number of different materials suitable for making these semiconducting layers for using in solar cell. One of the candidate materials for using in solar cell is the cuprous oxide (Cu2O).The cuprous oxides is interested because of its emerging applications in low-cost solar cell technology.

The cuprous oxide films were prepared by DC magnetron sputtering.
This study includes three main parts :

1.Define the range of parameters to prepare the
single phase of cuprous oxide(Cu2O)
2.Prepare and study the properties of N-doped
Cu2O films by Co-sputtering process.
3.Improve the electrical properties of Cu2O
films by hydrogen plasma treatment.

The results show that the formation of pure Cu2O films is not only dependent on the substrate temperature but also strongly effected by the oxygen to argon flow rate ratio.
The resistivity of cuprous oxides is related to the substrate temperature,reactive gases,and the sputter pressure.
The nitrogen is an effective dopant for p-type Cu2O films. The resistivity of Cu2O film decreases from 136.0 ohm-cm to 14.8 ohm-cm as nitrogen is doped .
The hydrogen plasma treatment provides an effective method to passivate the carrier traps.The resistivity of Cu2O film can be as low as 9.5 ohm-cm after nitrogen doping combined with a following hydrogen plasma treatment.

並列關鍵字

Hall effect system ； Copper (Ⅱ) oxide ； Copper( I ) oxide ； Sputter

參考文獻

[4] S. P.Sharam. J. Vac. Sci. Technol., 1979, 16: 1557~1559.

2000,190: 35~42.

[7] Tsuyosi Takata, Shigeru Ikeda, Akira Tanaka, Michikazu Hara,Junko N.

[9] N.Ozer, F.Tepehan. Solar Energy Materials and Solar Cell, 1993, 30: 13.

in: Proceedings of the European Community of Photovoltaics, Reidel,