氧化亞銅薄膜之摻雜及性質研究

The study on the doping and properties of Cu2O films

江宗益(Zong-Yi Chiang)

指導教授 ： 陳國駒

義守大學/理工學院/材料科學與工程學系/碩士(2016年)

摘要

本實驗利用射頻磁控濺鍍系統於康寧玻璃基板(Corning 1737)沉積氧化亞銅薄膜。藉由改變濺鍍之氮氣比例(20%、40%、60%、80%)、靶材La摻雜量(0at%、3at%、6at%、9at%)以及Sr摻雜量(0at%、3at%、6at%、9at%)，探討其對氧化亞銅薄膜之性質影響。
實驗結果顯示，氧化亞銅(Cu2O)薄膜摻雜氮氣可抑制氧化銅(CuO)相產生，並提高其光電性質，可見光平均穿透率為43.28%，能隙為2.54eV，電阻率為112.27Ω-cm。
La摻雜氧化亞銅薄膜可促使結構往Cu2O(111)面方向生長，(111)優選方向比例達89.87%，且大幅提高氧化亞銅薄膜之光學性質，於可見光平均穿透度為62.29%，光學能隙達3.01eV。3at%La摻雜氮氣比為20%時，有最佳的電阻率為316 Ω-cm，載子遷移率為13.5 cm2/Vs，載子濃度為6.14x1015cm-3。
Sr摻雜氧化亞銅薄膜可有效增強其導電性質，在9at%Sr摻雜氮氣比為20%時，有最佳電阻率為3.63Ω-cm，載子遷移率為2.75 cm2/Vs，載子濃度為1.09x1018 cm-3。且在6at%Sr摻雜氮氣比為40%時，有最佳能隙為2.71eV。

關鍵字

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並列摘要

In this experiment, the uprous oxide (Cu2O) films were deposited on corning glass 1737 substrates by RF magnetron sputtering. The doping effects on the properties of Cu2O thin films by various N2 flow ratios (20%~80%), co-doping level of La or Sr ranging from 0 to 9at% were investigated.
It is found that nitrogen doping can suppress the formation of CuO phase in the Cu2O films and improve the optoelectronic properties of Cu2O:N films.The optimal Cu2O:N film has band gap energy of 2.54 eV, transparency of 43% and resistivity of 112 Ω-cm at N2 ratio of 20%.
The La doped Cu2O films are highly (111) textured. The degree of prefer orientation along (111) is up to 90%. La doping dramatically improve the optical properties of Cu2O films with band gap energy of 3.01 eV and transparency of up to 62%. The Cu2O film has optimal resistivity of 316 Ω-cm, carrier mobility of 13.5 cm2/Vs and carrier concentration of 6.14x1015cm-3 at N2 flow ratio of 20% and La-doping of 3at%.
Sr-doping can effectinely enhance the electrical properties of Cu2O films.The Cu2O film has resistivity of 3.63Ω-cm, carrier mobility of 2.75 cm2/Vs and carrier concentration of 1.09x1018 cm-3 at N2 ratio of 20% and Sr-doping of 9at%. The band gap energy of the Sr doped Cu2O film is determined to be 2.71 eV for the films deposited at N2 ratio of 40% and Sr-doping of 6at%.

並列關鍵字

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參考文獻

[41]. 陳俊元，磁控濺鍍氧化亞銅奈米薄膜之光電特性研究，崑山科技大學電子工程學系碩士論文，2004年，第22-62頁。

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