摻鎵氧化鋅薄膜沉積於可撓式基板之研究

Study of Ga-doped ZnO thin film deposited on flexible substrate

陳建廷(Chien-Ting Chen)

指導教授 ： 林彥勝

共同指導教授 ： 沈慶興(Ching-Shing Shen)

義守大學/電機資訊學院/電子工程學系/碩士(2018年)

摘要

本研究主要藉由調整自緩衝層厚度，總厚度與添加不同氣體氣氛和間歇性製程來改善摻鎵氧化鋅(GZO)薄膜光電特性，且主要沉積於可撓式塑膠(PC)基板。首先調變不同氧氣氛為0.6、0.8、1.0、1.2 sccm並固定膜厚80 nm，後續進行緩衝層厚度調整為60、80、100、120 nm，接著設計覆蓋層之厚度20、40、60、80 nm，在自緩衝層與覆蓋層間先固定間歇時間為7.5 min。得到厚度最佳參數後續調變間歇時間分別為2.5、5.0、7.5、10 min，最後調變不同氮氣氛為0.6、0.8、1.0 sccm。薄膜製程後使用霍爾載子量測(Hall-effect measurement)及紫外光/可見光光譜儀(UV-VIS Spectrophotometer)量測薄膜光電特性，並計算其最佳光電效益值(Figure of merit, FOM)。再藉由原子力電子顯微鏡(AFM)、場發射式掃描電子顯微鏡(FE-SEM)、X 光繞射儀(XRD)分析薄膜的表面結構以及結晶特性。根據研究結果顯示製程設計為0.8sccm 氧氣與氮氣通量，緩衝層及覆蓋層厚度為100 nm 及60 nm，間歇時間5 分鐘時，比較原始薄膜，其電阻率由4.12x10-1 降低至1.21x10-2 Ω-cm，於可見光範圍平均穿透率提升至93.61%，最佳光電效益值為6.83x10-4 Ω-1，驗證藉由適當製程設計，GZO 薄膜品質沉積於PC 可撓式基板獲得改善，具備未來應用於軟性電子元件之潛力。

關鍵字

摻鎵氧化鋅 ； 緩衝層 ； 可撓式基板 ； 氣氛製程 ； 間歇性製程

並列摘要

In this study, the photoelectric characteristics of gallium-doped zinc oxide(GZO) thin film deposited on flexble substrate was improved by adjusting the thickness of buffer layer and cover layer, different gas flow and intermittent process. At first, quantity of different oxygen as 0.6, 0.8, 1.0, 1.2 sccm is designed and fixed 80 nm GZO thickness. Then differernt thcikness of buffer layer as 60, 80, 100, 120 nm and cover layer as 20, 40, 60, 80nm had been grown, the intermittent time (IT) between buffer and cover layer is fixed as 7.5 min, and then is designed as 2.5, 5.0, 7.5, 10 min. Finally, the different nitrogen as 0.4, 0.8, 1.2 sccm were used to improve thin film. The resistivity and transmittance were measured by Hall-effect measurement and UV-VIS Spectrophotometer, the optimun figure of merit is calculated. The crystallographic, microstructures and suface roughness were analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM).The results shown that the optimum parameter is 100 nm buffer layer and 60 nm cover layer with the quantity of 0.8 sccm oxygen and 0.8 sccm nitrogen, and IT is 5 minutes. The resistivity reduces from 4.12x10-1 to 1.72x10-2 Ω-cm, the average transmittance in visible region increased to 93.61%, the optimum figure of merit is 4.81x10-4 Ω-1. GZO thin film grown on flexible substrate is verified to be improved by optimum design and also has potential to apply on soft electronic devices.

並列關鍵字

Gallium-doped Zinc Oxide (GZO) ； buffer layer ； ambience process ； flexible substrate ； intermittent process

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