摻鋁氧化鋅薄膜沉積於可撓式基板之光電特性研究

Study of optical and electrical properties on Al-doped ZnO thin film grown on flexible substrate

郭弘健(Hong-Jian Guo)

指導教授 ： 林彥勝

共同指導教授 ： 楊正中(Cheng-Chung Yang)

義守大學/電機資訊學院/電子工程學系/碩士(2016年)

摘要

本研究主要藉由射頻磁控濺鍍將摻鋁氧化鋅(ZnO：Al，AZO)薄膜沉積於可撓式基板上，藉由調配不同的膜層厚度比及緩衝層退火處理，來最佳化於可撓式基板上沉積AZO膜層。研究中首先藉由調變不同厚度比的緩衝層(Buffer layer)及覆蓋層(Cover layer)，再對緩衝層進行不同溫度的低溫退火，藉此改善緩衝層與可撓式基板間之界面。最後於選定之最佳緩衝層及覆蓋層厚度結構後，先於緩衝層表面進行不同時間的乾蝕刻處理，以利引導奈米銀粒子能均勻分布於緩衝層表面，藉以提升整體薄膜沉積於可撓式基板之光電特性。研究過程中藉由霍爾量測(Hall-effect measurement)系統來量測薄膜的導電特性，紫外光/可見光光譜儀(UV-VIS Spectrophotometer)量測薄膜的穿透率，再以掃描式電子顯微鏡(SEM)、原子力顯微鏡(AFM)觀察緩衝層表面結構，及X光繞射儀(XRD)來分析整體膜層的結晶特性。研究結果顯示在AZO膜層厚度比為50nm/30nm時，先對30nm緩衝層進行70℃退火並持溫3分鐘後，再於緩衝層表面施以480s的乾蝕刻粗化處理後，於其表面沉積50s濺鍍時間之奈米銀粒子，最後完成50nm覆蓋層沉積。經量測可得最佳化沉積於可撓式基板上之AZO/nano-Ag/AZO膜層，其電阻值最低為5.266×10-5Ω-cm，並在可見光範圍具有最高穿透率87.43%，計算得其最佳光電效益指數為3.96×10-1Ω-1。

關鍵字

射頻磁控濺鍍 ； 摻鋁氧化鋅 ； 奈米銀粒子 ； 可撓式基板

並列摘要

In this study, the Al-doped ZnO thin films were grown on flexible substrate by RF magnetron sputter, depend on the different percent thickness layers and thermal treatment on buffer layer, the optimum Al-doped ZnO thin film on flexible substrate had been grown. At first, the different thickness percent of buffer and cover layers had been deposited, and then different thermal temperatures were done on buffer layer to improve the interfacial bonding between buffer layer and substrate. After the optimum percent of buffer and cover layer structures were selected, the different density O2 plasma were selected to etch the surface of buffer layer, which will lead the uniform distribution of the Ag nano-particles on the surface to enhance the optoelectronic properties of AZO/ nano-Ag/ AZO layer on flexible substrate. In the study, the resistivity was measured by the Hall-effect measurement system and the optical property was measured by UV-Visible Spectrophotometer, the surface of buffer layer was analyzed by Atomic force microscopy (AFM) and scanning electron microscopy (SEM), the X-ray diffraction (XRD) was used to analysis the crystalline of thin film. As the results, the percent of AZO film at 50nm/30nm was selected, the 30 nm buffer layer was treated at 70℃ for 3 minutes and dry etched for 480 seconds, to lead the distribution of 50 seconds Ag nano particles and finally the 50nm AZO cover layer was deposited, the optimum AZO/nano-Ag/AZO thin films on flexible substrate had been grown. The low resistance is 5.26×10-5Ω-cm, the average transmittance in visible light is 87.43%, and the optimum figure of merit is 3.96×10-1Ω-1.

並列關鍵字

RF magnetron sputtering ； Aluminum-doped Zinc Oxide(AZO) ； Ag nano particle ； flexible substrate

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