本研究利用藍光磷光銥錯合物iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2'] (FIrpic)以及紅光磷光銥錯合物Tris[1-phenylisoquinoline-C2,N]iridium(III) (Ir(piq)3)、Bis(1-phenylisoquinoline)(acetylacetonate)iridium(III) (Ir(piq)2acac)製作出磷光白光有機發光二極體(phosphorescent white organic light-emitting diodes, PHWOLEDs);發光層更改傳統使用摻雜的方式,而是以非摻雜型發光層技術製作有機發光二極體,藍光磷光材料(FIrpic)之EL頻譜波峰位於472 nm,而紅光磷光材料(Ir(piq)3)及(Ir(piq)2acac)之EL頻譜波峰分別位於624 和628 nm,利用此藍光及紅光雙發光層並使用電荷控制層(charge control layer, CCL)概念,提升磷光白光有機發光二極體之發光效率及色穩定性。 本研究分成有機發光二極體元件電荷控制層及藍綠光發光層厚度比例與紅光材料種類對於元件特性的影響,並探討加入電荷控制層後載子的傳輸機制。實驗結果顯示電荷控制層、藍光發光層及紅光發光層在最佳條件下,製作出接近純白光及高色穩定性之磷光白光有機發光二極體元件,元件結構為ITO/m-MTDATA(40 nm)/α-NPB(30 nm)/mCP(10 nm)/FIrpic(12 nm)/mCP(2 nm)/ Ir(piq)2acac(1 nm)/TPBi(40 nm)/LiF/Al,最大發光效率為5.85 cd/A、在13.7 V時最大亮度為 2687 cd/m2,最大發光效率時CIE色度座標 (0.39, 0.35)、色溫(correlated color temperature, CCT) 3534 K,其CIE變化值僅為(±0.01, ±0.01)具高色穩定性。
In this study, we fabricated phosphorescent white organic light-emitting diodes (PHWOLEDs) with blue phosphorescent iridium complexes, iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-N,C2'] (FIrpic), and red phosphorescent iridium complexes, tris[1-phenylisoquinoline-C2,N]iridium(III) (Ir(piq)3) or bis(1-phenylisoquinoline)(acetylacetonate)iridium(III) (Ir(piq)2acac). The emitting layer (EML) is not the same as usual, that is fabricated by a non-doped process. The peak of electroluminescent (EL) spectrum of FIrpic, Ir(piq)3 and Ir(piq)2acac locate at 472 , 624 and 628 nm, respectively. The device current efficiency and color stability are enhanced by inserting a charge control layer (CCL) into the emitting layer. We discussed the carrier transport mechanism of OLED while the device has a CCL in EML. The thickness and material of each EML are modified to observe the luminous characteristics.Experimental results reveal that we have successfully fabricated PHWOLED with pure white light and high color stability by optimizing the thickness of EML and CCL. Optimized device structure is ITO/m-MTDATA(40 nm)/α-NPB(30 nm)/mCP(10 nm)/FIrpic(12 nm)/mCP(2 nm)/ Ir(piq)2acac(1 nm)/TPBi(40 nm)/LiF/Al. The maximum current efficiency of 5.85 cd/A and brightness of 2687 cd/m2 have been achieved. The CIE coordinates are (0.39, 0.35) and vary within (±0.01, ±0.01).