液相氧化法在絕緣體上砷化鎵之應用

The Application of GaAs on Insulator (GOI) with Liquid Phase Oxidation

陳奕翔(Yi-Shiang Chen)

指導教授 ： 李冠慰

義守大學/電機資訊學院/電子工程學系/碩士(2018年)

摘要

在本論文使用液相氧化法用於砷化鎵材料磷化銦鎵/砷化銦鎵高電子移動率電晶體閘極氧化層以及絕緣體上砷化鎵(GOI)兩個方面。以液相氧化法氧化覆蓋層的方式來取代傳統上需要先蝕刻覆蓋層的步驟，以及氧化阻障層形成絕緣體上砷化鎵結構，可有效減少因為蝕刻而造成的表面缺陷，而且製程上更為簡單且成本低。
元件特性方面，絕緣體上砷化鎵的金氧半-高電子移動率電晶體(MOS-HEMT with GOI)經量測得到在VGS = 1.5V時最大汲極電流密度為160 mA/mm。在VDS = 2 V時最大轉導峰值為123 mS/mm，兩端反向崩潰電壓為-15.1 V。fT和fmax分別是1.4 GHz 和2.4 GHz，低頻雜訊在10 Hz為2.5×10-14 V2/Hz，和絕緣體上砷化鎵的高電子移動率電晶體(HEMT with GOI)比較，可以得到更好的直流、高頻特性和低頻雜訊。

關鍵字

液相氧化法 ； 絕緣體上砷化鎵 ； 絕緣體上砷化鎵的金氧半-高電子移動率電晶體

並列摘要

In this thesis, liquid phase oxidation (LPO) was used for InGaP/InGaAs metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) and GaAs on Insulator (GOI). The step of oxidizing the cap layer by liquid phase oxidation replaces the conventional step of etching the cap layer, and the oxidized barrier layer forms the structure of GaAs on the insulator, which can effectively reduce surface defects caused by etching. The process is simple and low cost.
For the metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with GOI DC characteristics, the maximum drain current density of 160 mA/mm at the VGS = 1.5 V, the maximum peak transconductance is 123 mS/mm at the VDS = 2 V, two-terminal diode of the reverse breakdown voltage is -15.1 V. For the microwave characteristics, the fT and fmax are 1.4 GHz and 2.4 GHz, respectively. Compared with the high electron mobility transistor (HEMT) with GOI, it can get better DC characteristics, high frequency characteristics and low frequency noise.

並列關鍵字

liquid phase oxidation (LPO) ； GaAs on Insulator (GOI) ； metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT)

參考文獻

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