含三級丁基共聚物之合成及其化學增幅型正型光阻劑之性質研究

STUDY ON THE SYNTHESIS OF POLYMER WITH TERT-BUTYL GROUP AND THEIR CHARACTERS ON THE CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST

楊顯猷(Hsien-Yu Yang)

指導教授 ： 江文彥

大同大學/工程學院/化學工程學系所/碩士(2005年)

摘要

本實驗先合成一優良耐熱性單體 N-(4-carboxy-phenyl)maleimide (CPMI) ，將此單體與 tert-Butyl methacrylate 在60~70℃ 下，以 AIBN 為起始劑，行自由基共聚合反應合成含三級丁基之共聚合物。並且以相對於共聚合物15wt%的Triphenylsulfonium triflate 為光酸產生劑(PAG)，與不同比例之共聚合物配製成光阻劑。
此光阻劑為化學增幅型光阻劑，在 Deep-UV (248nm) 曝光下Photo Acid Generator (PAG)產生質子酸，在PEB過程中達到化學增幅的效果。以20 wt% 配製成的化學增幅型光阻劑能塗佈出1-2μm 之膜厚。另外，以0.015 wt% Na2CO3 水溶液顯影能得正型影像。由曝光時間-殘餘膜厚圖形可發現化學增幅型光阻劑相對於傳統光阻劑只需要較低的劑量825mJ/cm2 就可達到曝光的效果。

關鍵字

三級丁基、化學增幅、正型光阻、Deep-UV、光酸產生劑

並列摘要

In this investigation, monomer with high thermal stability, N-(4-carboxy-phenyl) maleimide (CPMI), was synthesized from the maleic anhydride , ρ-aminobenzic acid. With another monomer, tert-Butyl methacrylate, free radical copolymerization of this two monomer, were performed at 60~70℃ in the presence of azobisisobutyronitrile (AIBN) as an initiator in 12ml tetrahydrofuran (THF).
This photoresist is chemical amplified photoresist, exposured under Deep-UV (248nm) and photo acid generator produce acid proton. During post exposure bake (PEB) process chemical amplified achieved and the photo acid generator (PAG) is 15wt% relative copolymer. Using 20wt% photoresist coated and 1~2μm film thickness obtained. Develop in 0.015wt% Na2CO3 the positive pattern obtained. From exposure curve that chemical amplified photoresist need less exposure dose(825 mJ/cm2) relative traditional photoresist and achieve the effect of exposure.

並列關鍵字

tert-Butyl、chemical amplified、positive photore

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