選擇性成長奈米碳管作為三極式場發射顯示器

Triode field emission display with selective growth of carbon nanotubes

陳柏伸(Po-Shen Chen)

指導教授 ： 羅吉宗

大同大學/電機資訊學院/光電工程研究所/碩士(2004年)

摘要

本論文的目的是要成長奈米碳管(carbon nanotubes)膜於三極式場發射元件，我們成功以ICP RIE乾蝕刻鉬和二氧化矽層，然後在Mo/SiO2/Si之三極式元件內成長奈米碳管並量測其場發射特性。
閘極提供了較均勻的有效電場，幾乎每一像素都有電子束打螢光粉。一般的情況下大多數的電子在三極式場發射元件實驗時，會被閘極偏向吸收，三極式奈米碳管場發射元件的閘極電壓由0 增到15 V，其起始電場可由三極式測試條件下的7.55降到 5.83 V/μm，但是當電壓增到20 V,其起始電場增加到 6.64 V/μm。
此外，氫電漿後處理能夠有效改善奈米碳管場發射的特性。將三極式奈米碳管場發射元件經由氫電漿蝕刻，測定場發射的閘極電壓由0增到15 V，其起始電場降到3.2 ~ 4.63 V/μm 之間。

關鍵字

奈米碳管 ； 場發射顯示器

並列摘要

The main purpose of this thesis is to grow carbon nanotubes on a field emission triode type device. Molybdenum and SiO2 pattern were etched by inductively coupled plasma (ICP) reactive ion etching (RIE) system，Follow by carbon nanotubes deposited into the Mo/ SiO2/Si triode type device. The field emission properties were then characterized.

Gate voltage provided effective high electric field almost every pixel provide electron beam to the phosphor. In general, most of electrons are deflected to the gate in triode mode operation. The turn on field of carbon nanotubes field emission triodes decreased from 7.55 to 5.83 V/μm when the gate voltage increased from 0 to 15 V. But turn on field increased up to 6.64 V/μm when applying the gate voltage over 20V.

In addition, hydrogen plasma process can improve the field electron emission properties of the carbon nanotubes. The field electron emission properties of the triode carbon nanotube device has been improved by hydrogen plasma post-treatment. The turn on field of carbon nanotubes field emission triodes decreased from 4.63 to 3.2 V/μm when the gate voltage increased from 0 to 15 V.

並列關鍵字

carbon nanotubes ； Triode field emission display

參考文獻

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