摘要
藉調整所通入的O2與N2比例，利用反應式直流磁控濺鍍沈積TiNxOy薄膜於Si（100）、304鏡面不鏽鋼、載玻片與圓形小玻璃基板上，以了解不同N／O比例對TiNxOy薄膜性質的影響。 發現濺鍍過程中，通入N2流量少於20 sccm時，會使薄膜形成近似非晶TiO2的型態，通入N2流量25 sccm時，構成具優選取向＜200＞的TiNxOy結晶薄膜。由AFM所作之表面型態觀察，發現大致上可形成均勻性良好之薄膜，薄膜顆粒尺度介於60奈米左右。表面平均中心粗糙度約在3奈米左右，所形成之薄膜具有相當平整的表面。 由UV－可見光光譜觀察，得知可由控制N／O比可改變對光特定波長的吸收行為。且由於吸收波長的不同，薄膜所呈現出的顏色也會跟著改變。而N／O比的改變也會影響薄膜鍵結與結晶結構，進而影響導電情況，若想要得到具良好導電性之TiNxOy薄膜，N與O流量的控制是相當的重要的。
並列摘要
To control different N/O ratio of reacting gas doped TiNxOy thin films by reactive DC magnetron sputtering on Si（100）、304 polished stainless steel、glasses and little circle glasses. In order to understand different N/O ratio affected the properties of TiNxOy thin films. When N2 was communicated less then 20 sccm during the sputter process that would let the thin films constructed to non-crystal TiO2 approximately. N2 was communicated about 25 sccm could construct ＜200＞ preferential orientation of crystal TiNxOy thin films. The surface morphologies were observed by Atomic Force Microscope. By this method, could depose well-uniform thin film that we could see. The surface particle scale of TiNxOy thin films were about 60 nm by Atomic Force Microscopy observed. The surface roughness Ra was about 3 nm. Therefore, it is quite smooth plate surface of thin films. The spectrums had studied by UV-visible light spectrophotometer. It was realized that controlling the N/O ratio of reacting gas could change the absorption of different wavelength. As a result of, the absorption of different wavelength could appear different colors of TiNxOy thin films. In addition, changing the N/O ratio of reacting gas could affect the structure and the bonding of TiNxOy thin films. Then, the resistivities of TiNxOy thin films were also affected. If we want to obtain more conductive TiNxOy thin films, to control N/O ratio of reacting gas was quite important.
參考文獻
延伸閱讀
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