在SOI基板上製作自我對準式單模屋脊光波導之研究

INVESTIGATION OF SELF ALIGNMENT SINGLE MODE RIDGE WAVEGUIDES BASED ON SILICON ON INSULATOR SUBSTRATES

李鍾沛(Chung-pei Li)

指導教授 ： 蔡五湖

大同大學/電機資訊學院/光電工程研究所/碩士(2007年)

摘要

摘 要
在本篇論文中，利用光線傳播法BPM(Beam Propagation Method)模擬屋脊波導結構的光場分佈，證明我們所設計的屋脊波導具有單模的特性。利用黃光微影製程和感應式耦合電漿ICP-RIE(Inductively Coupled Plasma Reactive Ion Etching)乾蝕刻的方式，在絕緣層覆矽晶圓SOI(Silicon on Insulator)上製作屋脊結構的波導。此方式簡易，且容易結合其他半導體元件，也可獨立製作積體光學元件。由不同蝕刻深度可發現對光損失的影響。為了有效提高耦合效率，皆需利用研磨機研磨端面，使端面的粗糙度降至0.1µm，降低入射光損失。此外，要將單模光纖耦光至波導結構中非常不易，所以，利用二次光罩製作自我對準式的U型槽(U-groove)，使單模光纖對準的困難度降低，有助於屋脊波導利用光纖連結其他光學儀器。

關鍵字

SOI 晶圓 ； 乾蝕刻 ； 光波導

並列摘要

ABSTRACT
In this thesis, we have simulated the distributions of optical field in ridge waveguides by BPM (Beam propagation method) to investigate the ridge waveguides that we designed have single mode characteristic. We have used the photolithography and the ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) dry etching technique to produce ridge waveguides on the SOI (Silicon on Insulator). Waveguide devices fabricated on SOI substrates have the facility of simple in design and easy to combine with semiconductor devices and integrated optical devices. The results show that the properties changed insensitively with respect to the etching depth. In order to increase the couple efficiency, the ridge waveguide end facets are polished by a series of diamond films to reduce the end facets roughness to 0.1µm without serious insertion loss. In addition, the alignment consideration between the single-mode fiber and ridge waveguide has also been studied by photolithography method to produce self-alignment U-groove. It can improve the performance of coupling single-mode fiber to the ridge channel waveguide and some experimental results have been illustrated in this thesis.

並列關鍵字

dry etching ； optical waveguide ； SOI wafer

參考文獻

[1]Atsushi Yamada, Masao Sakuraba, Junichi Murota, “Integration of Si p-i-n diodes for light emitter and detector with optical waveguides”, Materials Science in Semiconductor Processing, 8, (2005) 435-438.

[2]Jinsong Xia, Jinzhong Yu, Zhangtao Wang, Zhongchao Fan, Shaowu Chen, “Low power 2×2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching”, Optics Communications, 232, (2004) 223-228.

[3]Seong Phun Chan, Ching Eng Png, Soon Thor Lim, Graham T. Reed, and Vittorio M. N. Passaro, “Single-mode and Polarization -Independent Silicon-on-Insulator Waveguides with Small Cross Section”, J. Lightwave Technol., Vol. 23, No. 6, June 2005.

[4]T. K. Liang, and H. K. Tsang, “Integrated Polarization Beam Splitter in High Index Contrast Silicon-on-Insulator Waveguides”, IEEE Photon. Technol. Lett., Vol. 17, No. 2, February 2005.

[5]L. Vivien, S. Laval * , B. Dumont, S. Lardenois, A. Koster, E. Cassan, “Polarization-independent single-mode rib waveguides on silicon-on-insulator for telecommunication waveglengths”, Optics Communications, 210, (2002) 43-49.