聚(3-己烷基噻吩)之可撓曲式有機薄膜電晶體 之特性探討

Studies on the Characteristics of Regioregular Poly(3-hexylthiophene) Flexible Organic Thin-Film Transistor

廖國盛(Kuo-Sheng Liao)

指導教授 ： 郭欽湊

大同大學/工程學院/化學工程學系所/碩士(2008年)

摘要

本實驗為使用高位置規則性聚(3-己烷基噻吩)(P3HT)為半導體材質在聚對苯二甲酸乙二酯(PET)上製作可撓曲式有機薄膜電晶體與特性探討。熱硬化的聚醯胺樹酯(PA)，雙層有機絕緣層 PA與聚(4-乙烯酚)(PVP)以及PA與無機絕緣層氧化鋁(Al2O3)作為閘極絕緣層。
以單層PA製作上接觸式之可撓曲式有機薄膜電晶體，其載子位移率為2.89 × 10-2 cm2/Vs，開關電流比(on/off current ratio)為2.14 × 102；進一步使用十八烷基硫醇(1-ODT)對金閘極電極作表面處理，使表面平滑性提升而有利於載子傳輸，載子位移率為3.49 × 10-2 cm2/Vs，開關電流比可提升至1.04 × 103。
以PA/PVP為雙層絕緣層的元件載子位移率與開關電流比分別為3.52 × 10-2 cm2/Vs及2.63 × 102，與單層PA之元件比較，特性無明顯提升。以PA與Al2O3(150 nm)做雙層絕緣層所製備的上接觸式元件，當閘極電壓(VG)從10 V到-50 V，載子位移率與開關電流比分別為3.61 × 10-2 cm2/Vs及2.11 × 105。開關電流比與使用單層PA相比較，可以提升約103倍。降低操作電壓，閘極電壓(VG)從10 V到-10 V，其載子位移率與開關電流比分別為1.08 × 10-1 cm2/Vs及2.35 × 104。
另一方面，以copoly(3-hexylthophene-co-3-dodecylthiophene) (P3HTDDT)共聚合物為半導體層，單層PA為絕緣層所製作的上接觸式元件其mobility為5.20 × 10-2 cm2/Vs，on/off ratio為 8.93× 102。進一步的使用PA/Al2O3(90 nm)雙層絕緣層，閘極電壓(VG)從10 V到-50 V時，載子位移率與開關電流比分別為3.01 × 10-1 cm2/Vs及1.43 × 103。當降低操作電壓，閘極電壓(VG)從10 V到-10 V時，其載子位移率與開關電流比分別為9.47 × 10-2 cm2/Vs及1.50 × 103。

關鍵字

開關電流比 ； 載子位移遷移率 ； 撓曲式場效電晶體 ； 聚(3-己烷基噻吩) ； (3-己烷基噻吩)與(3-十二烷基噻吩)嵌段共聚物

並列摘要

In this study, the characteristics of flexible organic thin-film transistors (OTFT) fabricated with highly regioregular poly(3-hexylthiophene) (P3HT) as semiconductor layer on poly(ethylene terephthalate) (PET) have been investigated. Thermal curable polyamide resin (PA), dual layer of organic dielectric, PA and poly(4-vinylphenol) (PVP), and inorganic dielectric, aluminum oxide (Al2O3) were used as gate dielectric.
The field-effect mobility and on/off current ratio of the top-contact flexible OTFT with PA dielectric layer were 2.89 × 10-2 cm2/Vs and 2.14 × 102, respectively. It was found the surface of gate insulator treated with 1-octadecanethiol (1-ODT) leads to smoother in favor of carrier transport. The mobility and on/off current ratio were 3.49 × 10-2 cm2/Vs and 1.04 × 103, respectively.
The mobility and on/off current ratio of flexible OTFT with PA/PVP dual layer as gate dielectric layer were 3.52 × 10-2 cm2/Vs and 2.63 × 102, respectively, which are similar to the performance of device with PA layer. The mobility and on/off current ratio of P3HT OTFT with PA/Al2O3 (150 nm) dual layer gate dielectric were 3.61 × 10-2 cm2/Vs and 2.11 × 105, respectively, when VG was scanning form 10 V to -50 V. The on/off current ratio increases three orders of magnitude larger than that of device with PA layer. The mobility and on/off current ratio were 1.08 × 10-1 cm2/Vs and 2.35 × 104, respectively, when VG was scanning from 10 V to -10 V.
On the order hand, the top-contact flexible OTFT fabricated with copoly(3-hexylthiophene-co-3-dodecylthiophene) (P3HTDDT) as semiconductor layer and PA as a gate dielectric have been investigated. The mobility and on/off ratio were 5.20 × 10-2 cm2/Vs and 8.93×102, respectively. The mobility and on/off ratio of P3HTDDT with PA/Al2O3 (90 nm) dual layer were 3.01 × 10-1 cm2/Vs and 1.43 × 103, respectively, when VG was scanning form 10 V to -50 V. The mobility and on/off current ratio were 9.47 × 10-2 cm2/Vs and 1.50 × 103, respectively, when VG was scanning from 10 V to -10 V.

並列關鍵字

copoly(3-hexylthiophene-block-3-dodecylthiophene ； flexible thin-film transistor ； poly(3-hexylthiophene) ； mobility.

參考文獻

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