本論文研究主要是探討薄膜TIPS-pentacene為半導體層電晶體之特性,結果發現最佳條件為以drop方式製備下接觸式電晶體,溶劑採用toluene濃度為1 wt%,退火溫度90℃,退火時間1 hr。經由實驗所得最佳的載子位移率為9.41 × 10-2 cm2/Vs,on current為-3.69 × 10-6 A,off current為-2.90 × 10-11A,on/off current ratio為1.27 × 105,VT 值為 – 3.8 V。TIPS-pentacene在長時間下有很高的穩定性。
In this study, the characteristics of organic thin-film transistors (OTFT) fabricated with TIPS-pentacene acted as a semiconductor material have been investigated. It is found that the optimal fabrication condition of bottom-contact OTFT with 1 wt% TIPS-pentacene in toluene solution acted as semiconductor subjected to annealing temperature at 90℃ for 1 hr. The optimal performance is the mobility of 9.41 × 10-2 cm2/Vs, on/off current ratio of 1.27 × 105, and threshold voltages of -3.8 V. The long-term stability of TIPS-pentacene OTFT can be demonstrated.