利用射頻磁控濺鍍法沉積p型CuCrO2:Mg 與n型ZnO於ITO 玻璃基板以形成透明p-n接面二極體

Fabrication of transparent CuCrO2:Mg/ZnO p-n junctions diode prepared by RF sputtering on ITO glass substrate

陳立峰(Lee-Fong Chen)

指導教授 ： 施文欽

大同大學/電機資訊學院/光電工程研究所/碩士(2012年)

摘要

本研究探討CuCrO2薄膜在不同製程參數條件下之CuCrO2:Mg和ZnO之二極體特性。利用射頻磁控濺鍍法得到CuCrO2:Mg/ZnO結構薄膜在ITO玻璃上，並提高基板溫度、降低製程壓力、適當的薄膜厚度與氬氣和氧氣比例可以得到良好的p-n透明二極體。進行X光繞射觀察其薄膜的結晶特性與結構，利用場發射式掃描電子顯微鏡觀察膜厚和薄膜表面形態，原子力顯微鏡測量薄膜之表面粗糙度約為11.87 nm，利用紫外可見光光譜量測光學穿透率可達約81%，能隙約為3.19 eV，由半導體參數分析儀量測I-V曲線，在輸入±4 V，計算出在450°C時有較佳的順向電流比值約85.91，顯示其可應用於透明二極體元件。

關鍵字

透明導電膜 ； pn接面二極體

並列摘要

This study investigated the characteristics of CuCrO2: Mg and ZnO diodes under the different process parameters. Fabrication of transparent CuCrO2:Mg/ZnO p-n junctions diode prepared by RF sputtering on ITO glass substrat. Improving the substrate temperature, the process pressure, thickness of film, and the proportion of oxygen and argon can be transparent p-n junction diode. The structural properties of CuCrO2:Mg and ZnO thin film was investigated by X-ray diffraction (XRD). The morphologies and the film thickness was investigated by scanning electron microscope (SEM). Atomic force microscopy (AFM) shows that the surface roughness is about 11.87 nm. By UV–visible spectroscopy the device exhibited an optical transparency of 75% in the visible region and the energy gap is about 3.19 eV. The I–V characteristics were measured by semiconductor characterization system. Applied voltage ± 4V, the device deposited at 450 °C shows great forward current ratio 85.91, which also demonstrate that it can apply in heterojunction device.

並列關鍵字

CuCrO2 ； transparent conduction oxides ； p-n junction diode

參考文獻

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