近年來由於短距離無線通訊的技術發展快速,人們對於短距離無線通訊產品的需求愈來愈多,其中包括無線射頻辨識(Radio Frequency Identification;RFID)系統。本論文主要內容為利用MOS level 3 model 以及TFT (Thin Film Transistor)的重要參數如電子遷移率(UO)、截止電壓(VTO)、溫度(TOX)模擬TFT元件,針對13.56MHz被動式Transponder 之AC to DC整流電路之功率轉換效率(Power Conversion Efficiency; PCE)進行研究,並分析在電路結構及製程參數下的PCE變化,驗證TFT元件製程技術能否替代傳統式MOS元件製程技術之設計可行性,並探討是否可應用於軟性電子(Flexible Electronics)技術大量生產軟性射頻電子標籤。
This paper discuss the bridge rectifier circuit design of the RFID transponder front-end based on thin film transistor technology, which is a promising device for flexible electronics. This is mainly because flexible electronics can be made using a continuous roll-to-roll process and cut the cost as a result. We simulate and analyze the performances of TFT-based gate bridge rectifier by means of Smart Spice and compare with that using diode and MOSFET devices. Proper parameters for high values of PCE was found and circuit layout has also been done.