水熱法單晶石英生長研究及其數值分析

Growth of Single Crystal Quartz by Hydrothermal Method and Numerical Analysis

吳玉祥(Yu-Shiang Wu) ； 王旭昇(Syu-Sheng Wang) ； 蔡鐸(Duo Tsai)

《中華技術學院學報》 37期 (2007/12) Pp. 1-15

https://doi.org/10.7095/JCIT.200712.0001

摘要

本研究主要是探討利用水熱法來生長單晶石英晶體，在研究過程中，控制並調整製程參數條件，以分析參數條件對晶體生長速率之影響。水熱法生長單晶石英晶體，必須在高溫高壓的環境下進行，為了了解壓力釜在高溫高壓下的應力應變特性，以及對操作壓力釜的安全考量，本研究使用ANSYS計算軟體模擬，進行溫度、應力的分析及模擬壓力釜內部的流動情況，從溫度、應力的分析結果可得知壓力釜可操作的溫度、壓力範圍，並可做為實際進行生長時的安全依據。
在單晶石英晶體生長過程中，影響生長速率及晶體品質的參數包括了生長溫度、生長壓力、礦化劑濃度、填充率、生長時間、隔板開口率等，本研究是以不同的隔板開口率為條件，從實驗結果顯示，隔板開口率約為2.5%至3.0%時，能獲得最快的生長速率。完成生長後的石英晶體，從光學顯微鏡中觀察到晶界會明顯的減少，而晶粒也會變得較大，經過長時間的生長就會趨向長成單晶的結果。

關鍵字

單晶石英 ； 水熱法 ； 壓力釜 ； 隔板開口率 ； ANSYS模擬

並列摘要

The research is mainly to grow single crystal of quartz by hydrothermal method. In this study, the parameters were controlled to analyze the influence for growth rate of crystal. The growth of single crystal quartz by hydrothermal method must be under the environment of the high temperature and pressure. The research is used as ANSYS simulation to analyze the characteristics of stress, strain and heat flow within the autoclave under the high temperature and pressure. The results can be the safety basis for growth of quartz by hydrothermal method.
The influence of growth rate and crystal quality includes growth temperature, growth pressure, mineralizer concentration, filling rate, baffle opening rate and growth time in the process of growth quartz. This investigation is set as the conditions with different baffle opening rates. The results show that the baffle opening rate of 2.5% to 3.0% obtains the fast growth rate. After growth, the quartz is observed by optical microscope and the results show the reduction of grain boundary and increase of crystalline grain. When the growth time become longer, the single crystal quartz will be obtained.

並列關鍵字

single crystal quartz ； hydrothermal method ； autoclave ； baffle opening rate ； ANSYS simulation