利用水熱法生長低差排密度壓電級單晶石英之研究

Study on Low Dislocation Piezoelectric Single Crystal Quartz Growth via Hydrothermal Method

吳玉祥(Yu-Shiang Wu) ； 游林豪(Li-Hao Yu) ； 黃建瑋(Huang-Chien Wei)

《中華科技大學學報》 44期 (2010/07) Pp. 21-38

https://doi.org/10.7095/JCUST.201007.0021

摘要

本研究主要探討利用水熱法長晶爐生長低差排密度壓電級單晶石英，以不同的製 程參數生長石英單晶體，並分析製程參數對晶體生長之影響。研究方法為將石英原礦、礦化劑以及晶種放入24 L之水熱法長晶設備中，經過高溫高壓的環境生長低差排密度單晶石英。生長低差排密度單晶石英過程中，有許多參數會影響生長速率及晶體品質，其中包括填充率、生長時間、生長溫度、生長壓力、隔板開口率、礦化劑濃度等。本研究是以不同的生長時間為條件，觀察生長時間對低差排密度單晶石英晶體的影響。實驗結果顯示，生長時間為90天時所生長之低差排密度單晶石英晶體具有較大的尺寸與較高的重量與重量生長率，以25天所生長之低差排密度單晶石英晶體具有較長的寬度生長率。利用強光照射晶體，發現在晶種旁有微氣泡產生，但其他區域並沒有明顯的氣泡以及其他巨觀缺陷產生。經由XRD繞射圖譜特性峰證明，生長出來之低差排r-bar石英晶體為單晶晶體。

關鍵字

水熱法 ； 壓力釜 ； 低差排密度單晶石英

並列摘要

This study mainly investigates the low dislocation piezoelectric single crystal quartz growth via hydrothermal grower. The effect of crystal growth is analyzed with different process parameters. Raw quartz, mineralizers and seeds are put into 24L autoclave grower through high temperature and high pressure environment. In low dislocation quartz growth, there are many parameters affect growth rates and quality such as filling rate, growth time, temperature, pressure, baffle opening and mineralizer concentration, etc. From experimental results, the quartz with 90 days growth time show the larger dimension, and higher weight growth rate than 25 days. However, the quartz with 25 days growth time exhibits the larger width growth rate. There are some micro-bubbles near seeds regions and no obvious bubbles and defects in other regions with light illumination. The r-bar quartz shows single crystal structure by XRD diffraction spectra characteristic peak proof.

並列關鍵字

hydrothermal method ； autoclave ； low dislocation single crystal quartz