以SEM及AFM進行多孔矽材料在拋光蝕刻及電解蝕刻之表面微觀研究

The Analysis of Polishing and Anodization Etching on the Porous Silicon Thin Films by Scanning Electron Microscope and Atomic Force Microscope

林嘉洤(J. C. Lin) ； 陳奕鴻(Y. H. Chen)

《華岡工程學報》 23期 (2009/01) Pp. 41-48

https://doi.org/10.29987/CCUHKJE.200901.0004

摘要

本研究使用鐵氟龍陽極電化學蝕刻槽，配合氫氟酸與乙醇混合溶液進行陽極電化學反應，在矽晶片表面形成多孔矽的結構。本研究以電子顯微鏡(SEM)觀察多孔矽表面及側面結構並以原子力顯微鏡(AFM)觀察多孔表面結構和粗糙程度。結果發現，在不同參數下電子顯微鏡可以觀察到多孔矽結構及表面結構的多孔矽有拋光蝕刻及電解蝕刻，原子力顯微鏡則可檢驗多孔矽表面層在製程中，受氫氣泡影響的結果。

關鍵字

陽極電化學蝕刻 ； 多孔矽 ； 電子顯微鏡SEM ； 原子力顯微鏡AFM

並列摘要

The anodization electrochemistry etching is studied on the silicon based substrates by SEM and AFM. Porous silicon structure is fabricated in Teflon container with HF and alcohol mixture solutions. By SEM and AFM, the top view and cross section view can be observed and compared. It is found that the higher HF concentration would cause a deeper porous silicon film. In addition, the higher anodization current density would result in a rough surface. Besides, the hydrogen bubble influences the formations of porous thin film and its film quality. Its related properties are discussed in the paper.

並列關鍵字

Anodization electrochemistry etching ； porous silicon ； SEM ； AFM