This research by the silicon chip with electrochemical anodization and reversion bias etching, The experiments including film thickness and properties of fabricated surface porous silicon were measured. Through different etching-parameter, and measured by SEM measurement. For clarifying this structure, photoluminescence characteristics which including wavelength and intensity for different etching-parameter were measured by Maple-PL. Because p-type silicon with features of electron holes. By electrochemical anodization and reversion bias etching to control experimental response. When reduce the island could increase luminous life. This way can make the p-type silicon has flat surface just like n-type silicon, and more cheaper than n-type silicon ,and saving more time.