並列摘要
A ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetector operated in the 2.5~7 μm range by photovoltaic and photoconductive mixed-mode near-room-temperature operation (250K) was demonstrated. The specific peak detectivity D(superscript *) is 2.4×10^8 cm HZ(superscript 1/2)/W at 250 K. The use of high-band-gap Al0.3Ga0.7As barriers at both sides of the InAs quantum-dot structure and the long carrier recombination time are the key factors responsible for its near-room-temperature operation.
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