薄膜相變化光學檢測系統之檢測光源特性研究

Evaluation of Probe Lasers Employed in Optical Diagnostics for Phase Transformation of Thin Films

郭啟全(Chil-Chyuan Kuo)

《光學工程》 102期 (2008/08) Pp. 58-66

https://doi.org/10.30011/OE.200808.0006

摘要

The stability and reliability of probe laser is an important factor affecting the inspection of phase transformation process of Si thin films during excimer laser crystallization using in-situ time-resolved optical measurements. The changes in 2D intensity profile, peak power density, and beam wander of the commonly used helium-neon (He-Ne) and diode laser are investigated experimentally. It is found that the peak power density of He-Ne laser is higher than that of diode laser, while the total power of He-Ne laser is lower than that of diode laser. Although the instability in the peak power density of He Ne laser will increase with increasing the operation time, the beam stability of He-Ne laser is better than that of diode laser. For long-time operation (＞24 hours) of optical measurements, the diode laser is a good candidate of probe laser. Conversely, the diode laser is suitable for the short-time operation (＜24 hours) of optical measurements because the beam-wander is higher than that of He-Ne laser.

關鍵字

檢測光源 ； 光學檢測系統 ； 薄膜相變化

並列摘要

The stability and reliability of probe laser is an important factor affecting the inspection of phase transformation process of Si thin films during excimer laser crystallization using in-situ time-resolved optical measurements. The changes in 2D intensity profile, peak power density, and beam wander of the commonly used helium-neon (He-Ne) and diode laser are investigated experimentally. It is found that the peak power density of He-Ne laser is higher than that of diode laser, while the total power of He-Ne laser is lower than that of diode laser. Although the instability in the peak power density of He Ne laser will increase with increasing the operation time, the beam stability of He-Ne laser is better than that of diode laser. For long-time operation (＞24 hours) of optical measurements, the diode laser is a good candidate of probe laser. Conversely, the diode laser is suitable for the short-time operation (＜24 hours) of optical measurements because the beam-wander is higher than that of He-Ne laser.

並列關鍵字

Probe laser ； Optical diagnostics ； Phase transformation of thin films