在本文中,我們探討了利用Monte Carlo光追跡用於分析GaN LED光萃取的研究。我們使用了晶片塑形、表面微結構與圖案式基板等技術,並應用於Wire Bond、Flip-Chip與Thin-GaN三種晶片封裝形式之光萃取效率,最後探討其在封膠前後的效率的變化。
In this paper, we discuss the study of light extraction efficiency based on Monte Carlo ray tracing for Wire Bond, Flip-Chip and Thin GaN. The extraction technology includes chip shaping, surface texture and patterned sapphire substrate. In addition, we simulate the light extraction efficiency for these structures before and after encapsulation with a lens.