- 期刊
薄膜型與奈米柱型之氧化鋅紫外光發光二極體
Thin-film and Nanorod ZnO-based Ultraviolet light-emitting Diodes
並列摘要
In this study, a novel vapor cooling condensation system was used to grow ZnO-based semiconductors with a high quality and low defect concentration. Consequently, N-ZnO film/I-ZnO film/P-GaN and N-ZnO nanorodfl-ZnO nanorod/P-GaN ultraviolet light-emitting diodes (LEDs) were fabricated and studied. From the electroluminescence spectra, a near-band edge emission was observed form these p-i-n LEDs. The ultraviolet emission was due to the electron-hole pair recombination in the high quality I-ZnO region. As a result, ZnO-based LEDs are promising devices for ultraviolet applications.
延伸閱讀
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