藍寶石單晶晶體生長冷卻階段之降溫速率對品質影響研究

藍寶石為氧化鋁（Al2O3）的單晶，又被稱為剛玉（Corundum），因為具備優秀的機械、光學、化學及抗輻射等特性，於材料業界中廣受重視，更成為LED的主要基板材料。藍寶石單晶的生長方式有凱氏長晶法（KY）、柴氏拉晶法（CZ）、熱交換法（HEM）與焰熔法等。本研究使用凱氏長晶法來生長藍寶石單晶，並探討冷卻階段時，以不同的降溫速率（電壓下降速率）比較藍寶石單晶的品質，電壓下降速率分別設定為210 mV/hr與160 mV/hr。經研究顯示，使用210 mV/hr的降溫速率，其晶體內部因為降溫速率過快而出現大量的裂痕；在160 mV/hr的降溫速率下，晶體內部沒有出現裂痕且較為清澈，然而在此晶體內部仍發現些許雜質，推測在加熱過程中，加熱器表面的微量雜質因為高溫而釋出，並滲入至熔湯所致。

關鍵字

凱氏長晶法；藍寶石單晶；晶體生長；降溫速率

並列摘要

Sapphires are single crystals of aluminum oxide (Al2O3), also known as Corundum. The sapphire is widely valued in the material industry and made into major substrate material for LED, due to its excellent mechanical, optical, chemical and anti-radiation characteristics. The growing methods of the sapphire include Kyropoulos method (KY), Czochralski mothod (CZ), Heat Exchange method (HEM), Flame Fusion method (also known as Verneuil method), etc. This study conducted Kyropoulos method for the growth of sapphire single crystal, and compared the quality of sapphire single crystal under different cooling rates (voltage-drop rates), 210 mV/hr and 160 mV/hr respectively, in the cooling stage. According to the experiment result, there were a large amount of cracks within the crystal due to the rapid cooling rate of 210 mV/hr. There are no cracks within the crystal under the cooling rate of 160 mV/hr, and the crystal appears more clearly; however, there were still some impurities found in the crystal. It is assumed that the trace impurities on the surface of the heater were released into the melt during the heating process.

並列關鍵字

Kyropoulos Method (KY) ； sapphire single crystal ； crystal growth ； cooling rate

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藍寶石單晶晶體生長冷卻階段之降溫速率對品質影響研究

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