Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films
Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions
G. Campet,1C. Geoffroy,1S. J. Wen,1J. Portier,1P. Keou,2J. Salardenne,2and Z. W. Sun3
Received10 Sept 1990
Accepted06 Nov 1990
Abstract
ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence
of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical
measurements were performed between 95 and 600 K. Free carriers concentration in the film were
measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts
allowing to simplify Manifacier method.Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.