The experimental realization of a p-type Si/SiGe doped-channel field-effect transistor (DCFET), utilizing a strained and graded Si(subscript 1-x)Ge(subscript x) well as the conducting channel, has been successfully fabricated. The graded variation of the Ge fraction in channel induced built-in field can prevent transconductance from shaping down drastically under forward gate bias and increase the carrier confinement for device operation. It is found that by grading Ge fraction in the channel, the devices exhibit the excellent property not only of higher current density but also enhancement in extrinsic transconductance and linear operation range over a wider dynamic range than those of devices with uniform Ge profile for the same integrated Ge dose in SiGe conducting well.