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The THz Instability in a Two Dimensional Quantum Gated Electron Gas with Scattering of Carriers
並列摘要
Plasma wave generation is a result of the wave amplification due to the reflection from the device boundaries, and typical plasma frequencies lie in the terahertz (THz) range in nanometer field effect transistors (FETs). In this paper, the influence of the scattering of carriers on the instability of plasma waves in nanometer FETs is reported with quantum effects. The quantum effects enhance this instability considerably, as the imaginary part of the wave increases with quantum effects, but the external friction associated with electron scattering reduces the instability. Accordingly, the quantum effects can be used to compensate or overcome the stabilizing role of the friction due to the scattering of carriers on plasma wave generation. These properties could make the nanometer FETs advantageous for the design of terahertz plasmonic sources.
並列關鍵字
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延伸閱讀
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