本研究在於探究矽晶異質接面太陽能電池，與習知研究不同的是，我們由產業製程需求出發，從設備如何滿足製程需求之觀點啟始，探討設備對應製程技術需求之設計、並藉由該設備實現的薄膜製程結果，檢驗設備能力，藉此使研究內容未來可對於本種電池產品之需求可以系統性觀點進行診斷，並提出整體性的解決方案。在本研究中將首先解析產業問題，並以試量產設備進行薄膜製程開發，試量產設備採用in-line式PECVD超高頻電漿增強式鍍膜設備，就其針對製程需求之設計要點進行討論及性能探討，特別是其屬於連續生產型試量產設備。在設備的建構技術層面上，與單機設備相比較為複雜，製程生產最重要需求為大面積鍍膜之厚度分布均勻性，欲滿足該需求採用之設備核心技術以電磁分析能力為核心，本論文中將解構PECVD的射頻功率工作原理，對於射頻功率輸入腔體之行為，包含阻抗的分析、饋入電路的設計、影響電漿分布均勻性的電極板電場分布，所搭配的流場分析技術，使用儀器如射頻功率量測探針、射頻洩漏量測儀等儀器輔助下，建構出該設備結構。也因自主化設計掌握設備技術，可望能因應為了提升製程效能而不斷產生之設備改善及設計需求。終極目標為成功建構一具有良好鍍膜均勻度與設備穩定度之太陽電池鍍膜設備，其可提供品質穩定，可達到異質接面太陽電池之薄膜生產需求。本論文後半段並藉由改變設備之製程參數，包含功率密度、工作溫度、工作壓力、氣體比例，探討以上製程參數變化產出薄膜之光電特性趨勢，其後針對矽薄膜與矽基板間之缺限密度，對應的載子壽命，以及等效理論效率，進行討論，探討產出之薄膜品質與異質接面太陽電池元件之品質關連性。
藉由本研究提出之研究流程與內容，希望可更廣泛應用於鍍膜產業中，並結合目前國內設備業者，切入量產型PECVD的市場，提高國內設備業者在半導體界中的設備產品市占率，並為設備供應方以及設備使用者雙方共同創造可觀經濟價值。

This study is to explore the twin-shaped heterojunction solar cells. Different from the conventional research, we start from the industrial process requirements, and start from the viewpoint of how the equipment meets the process requirements, and explore the design of the equipment corresponding to the process technology requirements. The equipment realizes the film process results and verifies the equipment capabilities, so that the research content can be diagnosed systematically from the needs of the battery products in the future, and a holistic solution is proposed. In this study, the industrial problems will be analyzed first, and the thin-film process development will be carried out with the trial production equipment. The in-line PECVD ultra-high-frequency plasma-enhanced coating equipment will be used for the production equipment, and the design points for the process requirements will be carried out. Discussion and performance discussion, especially for continuous production type production equipment.
In the construction technology level of the equipment, it is more complicated than the single-machine equipment. The most important requirement for the process production is the uniformity of the thickness distribution of the large-area coating. The core technology of the equipment to meet this demand is based on the electromagnetic analysis capability. In this paper, The RF power working principle of PECVD will be deconstructed. For the behavior of the RF power input cavity, the analysis of the impedance, the design of the feeding circuit, the electric field distribution of the electrode plate that affects the uniformity of the plasma distribution, and the matching flow field analysis technique are used. The equipment is constructed by instruments such as RF power measurement probes, measuring plasma light emission spectrometers, RF leakage measuring instruments, and thermal imaging cameras. Due to the autonomous design and mastery of equipment technology, it is expected that the equipment improvement and design requirements will continue to be generated in order to improve the process performance. The ultimate goal is to successfully construct a coating equipment with good coating uniformity and equipment stability, providing stable quality and meeting the film production requirements of heterojunction solar cells.
In the second half of the paper, by changing the process parameters of the equipment, including power density, working temperature, working pressure, and gas ratio, the photoelectric characteristics of the film produced by the above process parameters are discussed, and then the defects between the tantalum film and the tantalum substrate are discussed. Limit density, corresponding carrier lifetime, and equivalent theoretical efficiency are discussed to investigate the quality of the resulting film and the quality of the heterojunction solar cell components.
With the research process and content proposed in this study, it is hoped that it can be widely used in the coating industry, and combined with the current domestic equipment industry, cut into the market of mass production PECVD, and increase the market share of equipment products in the semiconductor industry by domestic equipment manufacturers. And create considerable economic value for both the equipment supplier and the equipment user.

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