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  • 學位論文

多頻段焦電感測器

Multi-Frequency Band Pyroelectric Sensors

指導教授 : 蕭俊卿
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摘要


本研究提出一具檢測物體不同頻率及速度之多頻段焦電感測器設計,且具有優良之電壓響應。當焦電層厚度逐漸增加,較厚之焦電層於高頻響應緩慢,且較薄焦電層於低頻之電壓響應低,而達到高低頻段互相補償。因此,本研究利用氮化矽為熱阻隔層,以射頻濺鍍法搭配氣膠噴鍍法於矽基材上沉積四個不同厚度之氧化鋅焦電層。最薄之焦電層是由射頻濺鍍法所沉積,其擁有較小之熱容積且響應速度快可於高頻之感測,而較厚之焦電層其熱容積大、響應速度慢適合於低頻之感測頻段。由實驗結果得知,當焦電層厚度0.8μm、6μm、10μm、16μm於量測頻寬1~10KHz時,其電壓響應有效彌補各焦電層厚度之感測響應。因此,氣膠沉積法搭配射頻濺鍍法製作多頻段之氧化鋅焦電感測器,其輸出電壓響應之頻寬大幅增加,可證明本研究之多頻段焦電元件製作能有效提升感測被測物之感應頻寬。

並列摘要


This article proposes a meliorated multi-frequency band pyroelectric sensor for detecting subjects with various velocities, namely extending the sensing frequency under good performance from electrical signals. A tactic, gradually increasing thickness of the ZnO layers, is used for redeeming drawbacks of a thicker pyroelectric layer with a tardy response at a high-frequency band and a thinner pyroelectric layer with low voltage responsivity at a low-frequency band. The proposed sensor is built on a silicon substrate with a thermal isolation layer of a silicon nitride film, consisting of four pyroelectric layers with various thicknesses deposited by a sputtering or aerosol deposition (AD) method and top and bottom electrodes. The thinnest ZnO layer is deposited by sputtering, with a low thermal capacity and a rapid response shoulders a high-frequency sensing task, while the thicker ZnO layers are deposited by AD with a large thermal capacity and a tardy response shoulders a low-frequency sensing task. The fabricated device is effective in the range of 1 KHz~10 KHz with a rapid response and high voltage responsivity, while the ZnO layers with thicknesses of about 0.8 μm, 6 μm, 10 μm and 16 μm are used for fabricating the meliorated multi-frequency band pyroelectric sensor. The proposed sensor is successfully designed, analyzed, and fabricated in the present study, and can indeed extend the sensing range of the multi-frequency band.

參考文獻


簡榮富著,2014,COMSOL Multiphysics 有限元素分析快易通,皮托科技股份有限公司。
S. S. Rao著,1989,有限元素法-工程上之應用,陳昭昌譯,復文書局,台南。
黃聖文,2012,“焦電感測器之電極設計”,虎尾科技大學機械設計工程系碩士論文。
Sze, S. M., 1994, semiconductor sensor, John Wiley & Sons, Inc.
Wilson, J., and Hawkes, J. F. B., 1983, Optoelectronics: An Introduction, Prentice-Hall International.

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