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研究生： 傅從順
Tsung-Shun Fu
論文名稱： 三元熱電材料應用於微致冷晶片之研製
Fabrication of micro thermoelectric cooler with ternary thermoelectric material
指導教授： 楊啓榮
Yang, Chii-Rong
學位類別： 碩士
Master
系所名稱： 機電工程學系
Department of Mechatronic Engineering
論文出版年： 2011
畢業學年度： 99
語文別： 中文
論文頁數： 114
中文關鍵詞： 熱電材料 、電化學沉積技術 、熱傳導係數 、微致冷晶片
英文關鍵詞： Thermoelectric material, electrochemical deposition technology, thermal conductivity, micro-cooler
論文種類： 學術論文
相關次數： 點閱：210  下載：5 
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    • 本研究以電化學沉積的方式電鍍n型與p型 Bi-Te-Se熱電材料，同時，藉由平行線量測法對電化學沉積的熱電材料，量測其熱傳導係數，並獲得相關的熱電特性。最後利用已知熱電特性的熱電材料，搭配微機電製程技術，進行微致冷晶片之研製。
    以平行線量測法成功量取熱電材料的熱傳導係數，量測結果n-typed Bi-Te-Se熱電材料，其熱傳導係數為0.185 W/mK，而p-typed Bi-Te-Se熱電材料，其熱傳導係數為0.633 W/mK。藉由熱電優值公式獲得n-typed Bi-Te-Se熱電材料，其熱電優值為17.34×10-4/K，且在常溫工作環境下的ZT值為0.52；而p-typed Bi-Te-Se熱電材料，其熱電優值為53.189×10-3/K，且在常溫工作環境下的ZT值為1.596。最後，將已知熱電特性的熱電材料，藉由電化學沉積搭配微機電製程技術，成功研製出24對的微致冷晶片，其熱電接腳尺寸為600 um的方形陣列，電鍍高度約為10 um，後續將量測其致冷性能，並比較在不同對數條件下的致冷能力。

    In this study, n-typed and p-typed Bi-Te-Se thermoelectric materials are electroplated by electrochemical deposition method. The thermal conductivity and related thermoelectric characteristics were measured by parallel line method. Finally, the n-type and p-type Bi-Te-Se materials with known properties were applied to fabricate micro-cooler by MEMS process.
    The thermal conductivity were measured by parallel line method. For n-typed Bi-Te-Se material, the thermal conductivity is 0.185 W/mK, and for p-typed Bi-Te-Se material, the thermal conductivity is 0.633 W/mK. The figure of merit of n-typed Bi-Te-Se material is 17.34×10-4 /K, and room-temperature ZT value is 0.52. The figure of merit of p-typed Bi-Te-Se material is 53.189×10-4 /K, and room-temperature ZT value is 1.596. Finally, micro-coolers with 24 pairs were fabricated by electrochemical deposition and MEMS techniques, in which the dimension of the thermoelectric legs is 600 m and thickness of the electroplated is 10 m. Furthermore, the comparison of the cooling capability under different conditions will be measured.

    中文摘要 I 英文摘要 II 總目錄 III 表目錄 VI 圖目錄 VII 第一章 緒論 1 1.1 前言 1 1.2 微機電系統簡介 3 1.3 熱電材料簡介 5 1.4 散熱元件簡介 10 1.5 研究動機與目的 17 第二章 理論探討與文獻回顧 18 2.1 熱電效應 18 2.1.1 席貝克效應 18 2.1.2 帕耳帖效應 19 2.1.3 湯姆森效應 20 2.2 熱電優值 23 2.3 熱傳導量測法 26 2.3.1 熱擴散法 27 2.3.2 熱傳導法 31 2.3.2 三倍頻法 33 2.4 熱電材料製造技術 42 2.4.1 傳統製造技術 42 2.4.1.1 CZ法 42 2.4.1.2布里茲曼法 42 2.4.1.3 熱壓成形法 43 2.4.1.4 熱擠壓成形法 43 2.4.2 微加工製造技術 47 2.4.2.1物理氣相沉積法 47 2.4.2.2化學氣相沉積法 47 2.4.2.3火花電漿燒結法 48 2.4.2.4 網版印刷法 49 2.4.2.5 電化學沉積法 50 第三章 實驗設計與規劃 64 3.1 實驗規劃 64 3.2 實驗流程 68 3.2.1 黃光微影製程 68 3.2.2 電鍍製程 68 3.3 製程與量測設備 69 3.4 熱電特性量測與設備 75 3.4.1導電率量測 75 3.4.2席貝克係數量測 76 3.4.3 熱傳導係數量測 77 3.5 量測熱傳導係數之試片研製 82 3.6 微致冷晶片之研製 84 第四章 實驗結果與討論 87 4.1電流密度對三元熱電材料特性之影響 87 4.2 熱傳導係數量測試片之製作 88 4.2.1 聚合物薄膜及三元熱電材料鍍層之試片製作 89 4.3 熱傳導係數量測 92 4.3.1 聚合物薄膜之熱傳導係數量測 92 4.3.2 p型 Bi-Te-Se薄膜之熱傳導係數量測 93 4.3.3 n型 Bi-Te-Se薄膜之熱傳導係數量測 94 4.4 熱電材料之特性 104 4.5 微致冷晶片之製作 106 第五章 結論與未來展望 108 5.1 結論 108 5.2 未來展望 109 參考文獻 110

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