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研究生： 曾咨耀
Tzu-Yao Tseng
論文名稱： 化學氣相沉積法合成石墨烯
Growth Graphene by Chemical Vapor Deposition
指導教授： 胡淑芬
Hu, Shu-Fen
學位類別： 碩士
Master
系所名稱： 物理學系
Department of Physics
論文出版年： 2012
畢業學年度： 100
語文別： 中文
論文頁數： 99
中文關鍵詞： 石墨烯 、銅箔 、化學氣相沉積法 、轉印
英文關鍵詞： Graphene, copper, chemical vapor deposition, transfer
論文種類： 學術論文
相關次數： 點閱：114  下載：11 
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    • 近年來隨著科技不斷進步，人類生活與科技更是密不可分，半導體與電子元件更是蓬勃發展。於半導體與電子元件逐漸縮小化之製程條件要求下，以往元件縮小技術面臨重大挑戰，此時直接製程微小奈米結構成為另一種趨勢。包括奈米碳管、奈米線與近年熱門新興材料石墨烯。其特有準二維結構與快速電子飄移率更是備受大家矚目。
    有別於2010年諾貝爾獎得主在2004年所發表機械撥離法，也就是於高定向熱解離石墨（HOPG）中，運用膠帶反覆黏貼，機率性取出單層石墨烯。然而因取之不易，故無法針對工業上之應用進行量產。故本實驗採用化學氣相沉積法（CVD），利用過渡金屬銅箔當作催化金屬，於銅箔表面沉積石墨烯，並轉移至所需基板上。
    根據2009年由美國德州大學R. S. Ruoff所率領之研究團隊在Science期刊發表，利用化學氣相沉積法於過渡金屬「銅」上合成95%以上單層石墨烯，因銅之自我限制機制，故當石墨烯完全覆蓋表面後將不再繼續沉積雙層甚至多層石墨烯。
    相較於單層石墨烯快速之電子飄移率，雙層至十幾層有更多於單層石墨烯之自由電子數，更有利於較高導電效率之應用發展。因此我們研究溫度、壓力與氣體流量比例對石墨烯樣品結構與層數改變之影響。利用拉曼光譜分析儀分析品質與結構缺陷。
    轉印製程中，我們利用PDMS支撐石墨烯並蝕刻銅箔，轉移至載玻片上。利用原子力顯微鏡與四點探針觀察厚度與其片電阻。

    總目錄.....................................................I 圖目錄...................................................III 表目錄.....................................................X 第一章 緒論.................................................1 1.1 研究動機................................................1 1.2 石墨烯之介紹............................................5 1.2.1石墨烯之結構與發現......................................5 1.2.2 石墨烯之電子能帶特性...................................6 1.2.2 石墨烯之電子結構特性..................................10 1.2.3 石墨烯之熱力學特性....................................11 1.3 石墨烯之特性總結........................................14 第二章 製備方法介紹.........................................15 2.1 機械剝離法.............................................15 2.2 熱裂解碳化矽磊晶法......................................15 2.3 化學還原氧化石墨烯法....................................16 2.4 化學氣相沉積法.........................................17 2.5 文獻回顧...............................................17 2.6 研究目的...............................................25 第三章 樣品製作與儀器分析....................................26 3.1 樣品製作流程...........................................26 3.2 催化金屬基材...........................................26 3.3 石墨烯薄膜製程.........................................29 3.4 石墨烯轉移製程.........................................34 3.5 樣品分析與特性量測......................................36 3.5.1 掃描式電子顯微鏡......................................36 3.5.2 拉曼光譜儀...........................................38 3.5.4 四點探針.............................................45 3.5.5 基礎電性量測.........................................48 第四章 結果分析與討論.......................................50 4.1 石墨烯樣品製作與拉曼光譜分析.............................50 4.1.1 調控製程溫度.........................................53 4.1.2 調控製程時間.........................................56 4.1.3 調控製程氣體流量......................................59 4.2 石墨烯樣品量測.........................................80 4.2.1 四點探針量測片電阻....................................80 4.2.2 原子力顯微鏡量測......................................84 4.2.3 基礎電性量測.........................................88 第五章 結論................................................93 參考文獻...................................................95

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