研究生: |
王世安 Wang, Shih-An |
---|---|
論文名稱: |
整合氧化鋁鐵電記憶體之氧化錫薄膜電晶體元件電性探討之研究 Investigation of Tin-Oxide Thin Film Transistor Integrated with HfAlOx Metal-Ferroelectric-Metal Memory |
指導教授: |
鄭淳護
Cheng, Chun-Hu |
學位類別: |
碩士 Master |
系所名稱: |
機電工程學系 Department of Mechatronic Engineering |
論文出版年: | 2019 |
畢業學年度: | 107 |
語文別: | 中文 |
論文頁數: | 61 |
中文關鍵詞: | 薄膜電晶體 、氧化錫 、鐵電電容 、鐵電記憶體 |
英文關鍵詞: | Thin Film Transistor, Tin Oxide, Metal-Ferroelectric-Metal Capacitor, Ferroelectric memory |
DOI URL: | http://doi.org/10.6345/NTNU201901085 |
論文種類: | 學術論文 |
相關次數: | 點閱:79 下載:0 |
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1. Weimer, Paul K. "The TFT a new thin-film transistor." Proceedings of the IRE 50.6 (1962): 1462-1469.
2. Nomura, Kenji, et al. "Amorphous oxide semiconductors for high-performance flexible thin-film transistors." Japanese journal of applied physics 45.5S (2006): 4303.
3. Fortunato, Elvira, Pedro Barquinha, and R. Martins. "Oxide semiconductor thin‐film transistors: a review of recent advances." Advanced materials 24.22 (2012): 2945-2986.
4. Kobayashi, Masaharu, and Toshiro Hiramoto. "On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2 V supply voltage with ferroelectric HfO2 thin film." AIP Advances 6.2 (2016): 025113.
5. Salahuddin, Sayeef, and Supriyo Datta. "Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?." 2008 IEEE International Electron Devices Meeting. IEEE, 2008.
6. Meyer, B., and David Vanderbilt. "Ab initio study of ferroelectric domain walls in PbTiO 3." Physical Review B 65.10 (2002): 104111..
7. Chen, Po-Chun, et al. "Bipolar conduction in tin-oxide semiconductor channel treated by oxygen plasma for low-power thin-film transistor application." Journal of Display Technology 12.3 (2015): 224-227.
8. Nakamura, Takashi, et al. "Electrical properties of PZT thin films for memory application." Integrated Ferroelectrics 11.1-4 (1995): 161-170.
9. Chiu, Yu-Chien, et al. "Energy-efficient versatile memories with ferroelectric negative capacitance by gate-strain enhancement." IEEE Transactions on Electron Devices 64.8 (2017): 3498-3501.
10. Khan, Asif I., et al. "Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation." 2011 International Electron Devices Meeting. IEEE, 2011.
11. Granato, D. B., et al. "Enhancement of p-type mobility in tin monoxide by native defects." Applied Physics Letters 102.21 (2013): 212105.
12. Ogo, Yoichi, et al. "p-channel thin-film transistor using p-type oxide semiconductor, SnO." Applied Physics Letters 93.3 (2008): 032113.
13. Mueller, Stefan, et al. "Incipient ferroelectricity in Al‐doped HfO2 thin films." Advanced Functional Materials 22.11 (2012): 2412-2417.
14. Salahuddin, Sayeef, and Supriyo Datta. "Use of negative capacitance to provide voltage amplification for low power nanoscale devices." Nano letters 8.2 (2008): 405-410.
15. Y.C. Luo,et al. "The Guideline on Designing a High Performance NC MOSFET by Matching the Gate Capacitance and Mobility Enhancement." TSA (2019)
16. Moise, T. S., et al. "Electrical properties of submicron Ir/PZT/Ir capacitors formed on W plugs." International Electron Devices Meeting 1999. Technical Digest (Cat. No. 99CH36318). IEEE, 1999.
17. Tian, Xuan, et al. "Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm." Applied Physics Letters 112.10 (2018): 102902.
18. Evans, J. Joe T. "The Relationship between Hysteresis and PUND Responses." Radiant Technologies, Inc (2008).
19. Cheng, Chun-Hu, et al. "Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides." IEEE Transactions on Electron Devices 66.2 (2019): 1082-1086.
20. Yurchuk, Ekaterina, et al. "Charge-trapping phenomena in HfO 2-based FeFET-type nonvolatile memories." IEEE Transactions on Electron Devices 63.9 (2016): 3501-3507.