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postgraduate thesis: Photoluminescence and reflectance spectra of Si-doped GaN epilayers

TitlePhotoluminescence and reflectance spectra of Si-doped GaN epilayers
Authors
Advisors
Advisor(s):Xu, S
Issue Date2009
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Zhang, F. [張帆]. (2009). Photoluminescence and reflectance spectra of Si-doped GaN epilayers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4327856
DegreeMaster of Philosophy
SubjectGallium nitride.
Compound semiconductors - Spectra.
Photoluminescence.
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/56763
HKU Library Item IDb4327856

 

DC FieldValueLanguage
dc.contributor.advisorXu, S-
dc.contributor.authorZhang, Fan-
dc.contributor.author張帆-
dc.date.issued2009-
dc.identifier.citationZhang, F. [張帆]. (2009). Photoluminescence and reflectance spectra of Si-doped GaN epilayers. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4327856-
dc.identifier.urihttp://hdl.handle.net/10722/56763-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B43278565-
dc.subject.lcshGallium nitride.-
dc.subject.lcshCompound semiconductors - Spectra.-
dc.subject.lcshPhotoluminescence.-
dc.titlePhotoluminescence and reflectance spectra of Si-doped GaN epilayers-
dc.typePG_Thesis-
dc.identifier.hkulb4327856-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b4327856-
dc.date.hkucongregation2010-
dc.identifier.mmsid991028899759703414-

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