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研究生: 劉沛淇
Liu, Pei-Chi
論文名稱: 原子層沉積寬能隙氧化鋅錫緩衝層用於高效/環境友善之銅鋅錫硫硒太陽能電池
Highly Efficient/ Eco-Friendly CZTSSe Solar Cells with Atomic Layer Deposited Wide Bandgap ZnSnO Buffer Layers
指導教授: 陳貴賢
Chen, Kuei-Hsien
林麗瓊
Chen, Li-Chyong
口試委員: 陳貴賢 林麗瓊 陳政營 陳家俊
口試日期: 2021/07/21
學位類別: 碩士
Master
系所名稱: 化學系
Department of Chemistry
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 91
中文關鍵詞: 氧化鋅錫原子層沉積環境友善太陽能電池導帶位置差異晶格常數匹配載子濃度
英文關鍵詞: Zinc tin oxide, Atomic layer deposition, Eco-friendly solar cells, Conduction band offset, Lattice constant match, Carrier concentration
研究方法: 實驗設計法
DOI URL: http://doi.org/10.6345/NTNU202101095
論文種類: 學術論文
相關次數: 點閱:33下載:0
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  • 致謝 i 中文摘要 ii Abstract iv 目錄 vi 表目錄 x 圖目錄 xi 第一章、緒論 1 1-1 前言 1 1-2 太陽能源 3 1-2-1 太陽輻射 3 1-2-2 太陽能電池發展 6 1-3 研究背景 7 1-4 研究動機 11 第二章、文獻回顧 13 2-1 太陽能電池基礎原理 13 2-1-1 太陽能電池工作原理 13 2-1-2 半導體材料的太陽能吸收原理 15 2-1-3 太陽能效率轉換計算 18 2-2 CZTSSe太陽能電池各層簡介 20 2-2-1 鈉鈣玻璃(Soda-lime glass) 21 2-2-2 鉬金屬背電極 22 2-2-3 銅鋅錫硫硒(CZTSSe)吸收層 23 2-2-4 硫化鎘(Buffer layers) 24 2-2-5 窗層 (Window layers) 26 2-2-6 前電極(Front contact) 26 2-2-7 抗反射層(Anti-reflection layer) 27 2-3 開路電壓散失 27 2-3-1 銅、鋅錯位缺陷 28 2-3-2 介面缺陷複合 29 2-3-3 導帶位置差異(Conduction Band Offset) 29 2-4 異質介面改善 31 2-4-1 晶格常數匹配 31 2-4-2 鈍化層 33 2-5 載子濃度與空乏區的關係 34 2-5-1: 增加載子濃度和厚度 37 2-5-2 增加內建電壓(built-in voltage) 38 2-6無鎘寬能隙緩衝層 39 2-7 原子層沉積原理與性質 40 第三章、實驗步驟與儀器 43 3-1 實驗步驟 43 3-1-1 基板清潔與準備 43 3-1-2 金屬前驅物製備 43 3-1-3 硫硒化製程 44 3-1-4 硫化鎘(CdS)緩衝層製備 45 3-1-5 氧化鋅錫(ZnSnO)緩衝層製備 46 3-1-6 窗層(Window layer)製備 48 3-1-7 前電極鍍製 49 3-1-8 抗反射層製備(anti-reflection layer) 49 3-2 實驗儀器介紹 50 3-2-1 濺鍍機 50 3-2-2 化學氣相沉積儀 51 3-2-3 化學水浴沉積槽 52 3-2-4 原子層沉積儀(Atomic Layer Deposition) 52 3-2-5 蒸鍍機 53 3-3 分析儀器介紹 54 3-3-1 橢圓偏光儀 (Ellipsometry) 54 3-3-2 X射線光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS) 55 3-3-3 紫外-可見光譜儀 56 3-3-4紫外光光電子能譜(Ultraviolet Photoelectron Spectroscopy, UPS) 57 3-3-5電化學阻抗譜 (Electrochemistry Impedance Spectroscopy, EIS) 57 3-3-6 太陽光模擬器 59 3-3-7 外部量子效率(External Quantum Efficiency, EQE) 59 3-3-8 掃描穿透式電子顯微鏡(Scanning Transmission Electron Microscopy,STEM) 60 3-3-9 能量色散X射線光谱儀(Energy Dispersive X-Ray Spectroscopy, EDS) 61 第四章、實驗結果與討論 62 4-1 ZnO/SnOx原子層沉積的溫度成長窗 62 4-2 ZnO/SnOx的超循環比控制Sn含量比 63 4-3 X射頻光電子能譜對不同Sn/(Zn+Sn)比的Zn1-xSnxO成分分析 64 4-4 預期與實際的Sn/(Zn+Sn)與循環比之關係圖 66 4-5紫外-可見光譜對不同Sn/(Zn+Sn)比的Zn1-xSnxO之能隙 67 4-6 氧化鋅錫與CZTSSe吸收層的能帶位置分布 68 4-7 介面之晶格匹配度 70 4-8 氧化鋅錫的載子濃度 72 4-9 Zn1-xSnxO元件的厚度效應 74 4-10不同Sn/(Zn+Sn)比例的氧化鋅錫緩衝層在元件的影響 75 4-11 外部量子效率(External Quantum Efficiency, EQE) 78 4-12 掃描透射電子顯微鏡 (STEM)-元件橫截面影像 79 第五章、結論 82 參考文獻 83

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