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Fabrication and Physical Properties of La2−xSrxCuO4 Tunnel and Josephson Ramp-edge Junctions

並列摘要


We report the successful fabrication of ramp-edge type La2−xSrxCuO4 (LSCO) tunnel and Josephson junction using pulsed laser deposition, Ar ion milling and photolithography techniques. For LSCO/Ag tunnel junctions, the junctions with different angle geometry are fabricated on the same substrate simultaneously. The zero bias conductance peak is absent for the 0-junction, but observable for the finite angle junctions, indicating a strong evidence for dx2-y2-wave symmetry. For the LSCO/LSCO junction, the Josephson current of a few tenth of mA is observed. Clear Shapiro steps under microwave irradiation and the modulation of Josephson maximum current under external magnetic field are also observable.

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被引用紀錄


Chang, Y. R. (2017). 表面氧化參雜效應於高性能硒化銦光電晶體特性之研究 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU201701987
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