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Effects of Composite InGaAs and InAlAs Layers on the Emission Wavelengths of Quantum Dots
並列摘要
Ground-state emission wavelengths of pyramidal In As quantum dots (QDs) with a base length of b and a height of h capped by composite InGaAs and InAlAs layers were investigated theoretically in a one-band effective mass model framework. It was found that the ground-state emission wavelengths depend not only on the h/b ratio, but also on the thickness and position of the InGaAs and InAlAs layers. The maximum transition energy separation between the QD ground-and first-excited states appears in the composite InGaAs and InAlAs layers, but not on a single InGaAs or InAlAs overgrown layer. Such a result is attributed to the degree of delocalization for the first excited state being different from that of the ground state.
並列關鍵字
無資料被引用紀錄
林育瑛（2012）。高導熱相變化複合材料之製備〔碩士論文，朝陽科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0078-0305201210333720
延伸閱讀
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