以超高真空化學束磊晶系統成長氮化銦薄膜對結構特性之研究

Effect of Substrate Temperature on InN Films by UHV-Chemical Beam Epitaxy

陳維鈞(Wei-Chun Chen) ； 郭守義(Shou-Yi Kuo) ； 賴芳儀(Fang-I Lai) ； 蕭健男(Chien-Nan Hsiao)

《科學與工程技術期刊》 6卷1期 (2010/03) Pp. 9-13

https://doi.org/10.7117/JSET.201003.0009

摘要

本文利用自組裝之超高真空化學束磊晶系統成長高品質氮化銦(InN)薄膜於氮化鎵(GaN)磊晶層上，實驗過程中，主要探討以調變不同基板溫度對氮化銦薄膜結構及表面形貌之影響。由Ｘ光繞射實驗結果顯示，於不同基板溫度所成長之氮化銦薄膜皆是沿著c軸GaN磊晶層方向生長，幾乎無金屬銦殘留；在低溫(~430°C)所成長之氮化銦磊晶層有較佳的結晶品質；另外，由SEM(scanning electron microscopy)影像得知，在550°C時，沉積速率約爲1.2m/hr，且其表面粗糙度會隨著基板溫度提高而增加；由穿透式電子顯微鏡結果中得知，氮化銦沿著氮化鎵晶軸生長且爲磊晶結構，其c軸晶格常數約爲0.57nm；兩者之間並無反應層。綜合以上結果得知，使用氮化鎵異質基板可成長出高品質之氮化銦薄膜。

關鍵字

氮化銦薄膜 ； 化學束磊晶系統 ； 基板溫度

並列摘要

Growth of high-quality thin InN films on epi-GaN layers has been realized by a self-designed chemical-beam epitaxy system. The effects of growth temperature on the surface morphology and structural properties of the InN films were studied. The X-ray diffraction results indicated that the InN films having a wurtzite structure were preferentially oriented along the c-axis direction. Concurrently, no other diffraction peaks belonging to secondary phases or In metal appeared. The InN epilayers showed better quality at a lower growth temperature of 430°C. However, the SEM images revealed that as the growth rate reached 1.2 μm/hr at 550°C, the surface roughness increased with the growth temperature. A high-resolution TEM image clearly showed that the InN epilayer is grown coherently on the GaN layer; moreover, the spacing of the (0002) lattice plane is about 0.57 nm, being very close to that of bulk InN. These results indicate that the GaN heterostructure is essential for engineering the growth of high-quality thin InN films.

並列關鍵字

thin InN films ； chemical-beam epitaxy system ； substrate temperature