氮化鎵二維電子系統之傳輸特性

transport in two-dimensional GaN electron systems

黃健哲(Jian-Zhe Huang)

指導教授 ： 梁啟德

國立臺灣大學/理學院/物理研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.00103

摘要

無資料

關鍵字

二維電子 ； 氮化鎵

並列摘要

Abstract
This thesis describes the measurements on the low-temperature electron transport properties in a two-dimensional GaN electron system. This thesis consists of the following two parts:

1. Electron-electron interaction in a perpendicular magnetic field:
We report on experimental studies of Al0.15Ga0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultra thin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (>3 times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave way to integration of AlxGa1-xN/GaN HEMT structures with the mature Si technology in industry.

2. Weak localization effect in a perpendicular magnetic field:
We can illustrate weak localization by the constructive interference of wave functions which back to the origin after transmitting along time-reversed paths. Electrons will be localized by weal localization. The dephasing time , which determines the time scale kept the constructive interference of wave functions, limits the length of the time-reversed paths. It is known that weak localization causes a negative magnetoresistivity.

並列關鍵字

2DES ； GaN

參考文獻

chapter 1

[2] T.-Y. Huang, Master Thesis, National Taiwan University (2001).

[6] J. R. Juang, Master Thesis, National Taiwan University (2003).

[7] K. S. Cho, Ph.D Thesis, National Taiwan University (2007).

[8] F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).