碲化鉍合金薄膜熱電元件的開發

Development of Bismuth Telluride Alloy Thin Film Thermoelectric Devices

劉倡宜(Chang-Yi Liu)

指導教授 ： 廖洺漢

國立臺灣大學/工學院/機械工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.10422

摘要

本論文中利用磁控濺鍍沉積技術(Magnetron sputtering deposition)製備整合碲硒化鉍(Bi2.0Te2.7Se0.3)與碲銻化鉍(Bi0.4Te3.0Sb1.6)的薄膜式熱電元件。首先探討熱電材料的厚度改變之影響。當碲硒化鉍與碲銻化鉍薄膜的厚度為100nm時，Seebeck係數分別是-24.61uV/K與536.29uV/K。當碲硒化鉍與碲銻化鉍薄膜的厚度為50nm時，Seebeck係數分別是-30.03uV/K與844.37uV/K。很明顯的當熱電薄膜厚度由100nm改變至50nm時Seebeck係數會有明顯的提升，這是因為位能障散射(potential barrier scattering)效應所導致。接下來整合碲硒化鉍與碲銻化鉍薄膜製備薄膜式熱電元件，在本實驗中製備出來的薄膜熱電元件每度溫差下可提供0.24461毫伏。

關鍵字

熱電元件 ； 碲化鉍合金 ； 席貝克效應

並列摘要

In this thesis, we used magnetron sputtering deposition technique to deposit the thin film thermoelectric device that integrates Bi2.0Te2.7Se0.3 into Bi0.4Te3.0Sb1.6 thin film. At first, we discuss the different thickness effect on thermoelectric materials. When thickness of Bi2.0Te2.7Se0.3 and Bi0.4Te3.0Sb1.6 is 100nm, Seebeck coefficient is -24.61uV/K and 536.29uV/K respectively. When thickness of Bi2.0Te2.7Se0.3 and Bi0.4Te3.0Sb1.6 is 50nm, Seebeck coefficient is -30.03uV/K and 844.37uV/K respectively. As thermoelectric membrane thickness obviously change from 100nm to 50nm, Seebeck coefficient increases due to potential barrier scattering. Secondly, we use Bi2.0Te2.7Se0.3 and Bi0.4Te3.0Sb1.6 membrane to fabricate thin film thermoelectric device.

並列關鍵字

thermoelectric device ； Bismuth Telluride Alloy ； seebeck coefficient

參考文獻

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